NCEP033N85M datasheet, аналоги, основные параметры

Наименование производителя: NCEP033N85M

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 220 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 85 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 160 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 12.5 ns

Cossⓘ - Выходная емкость: 1100 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0033 Ohm

Тип корпуса: TO-220

Аналог (замена) для NCEP033N85M

- подборⓘ MOSFET транзистора по параметрам

 

NCEP033N85M даташит

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NCEP033N85M

NCEP033N85M, NCEP033N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =160A DS D switching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e

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NCEP033N85M

NCEP033N85, NCEP033N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =160A DS D switching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext

 4.2. Size:1095K  ncepower
 ncep033n85.pdf pdf_icon

NCEP033N85M

NCEP033N85, NCEP033N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =160A DS D switching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext

 4.3. Size:332K  ncepower
 ncep033n85 ncep033n85d.pdf pdf_icon

NCEP033N85M

NCEP033N85, NCEP033N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =160A switching performance. Both conduction and switching power RDS(ON)=3.10m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

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