Справочник MOSFET. NCEP033N85M

 

NCEP033N85M Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCEP033N85M
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 220 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 160 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 12.5 ns
   Cossⓘ - Выходная емкость: 1100 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0033 Ohm
   Тип корпуса: TO-220
 

 Аналог (замена) для NCEP033N85M

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEP033N85M Datasheet (PDF)

 ..1. Size:701K  ncepower
 ncep033n85m.pdf pdf_icon

NCEP033N85M

NCEP033N85M, NCEP033N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =160ADS Dswitching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e

 4.1. Size:1095K  ncepower
 ncep033n85d.pdf pdf_icon

NCEP033N85M

NCEP033N85, NCEP033N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =160ADS Dswitching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

 4.2. Size:1095K  ncepower
 ncep033n85.pdf pdf_icon

NCEP033N85M

NCEP033N85, NCEP033N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =160ADS Dswitching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

 4.3. Size:332K  ncepower
 ncep033n85 ncep033n85d.pdf pdf_icon

NCEP033N85M

NCEP033N85, NCEP033N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =160A switching performance. Both conduction and switching power RDS(ON)=3.10m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCEP030N30GU , NCEP030N60AGU , NCEP030N85GU , NCEP030N85LL , NCEP031N85M , NCEP033N10 , NCEP033N10D , NCEP033N10M , IRF530 , NCEP035N10M , NCEP035N12 , NCEP035N12D , NCEP035N12VD , NCEP035N60AG , NCEP035N60AK , NCEP035N60K , NCEP035N72 .

History: MTE050N15BRV8 | IRF5805TRPBF | NCEP036N10MSL

 

 
Back to Top

 


 
.