NCEP033N85M - Даташиты. Аналоги. Основные параметры
Наименование производителя: NCEP033N85M
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 220 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 160 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 12.5 ns
Cossⓘ - Выходная емкость: 1100 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0033 Ohm
Тип корпуса: TO-220
Аналог (замена) для NCEP033N85M
NCEP033N85M Datasheet (PDF)
ncep033n85m.pdf
NCEP033N85M, NCEP033N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =160ADS Dswitching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e
ncep033n85d.pdf
NCEP033N85, NCEP033N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =160ADS Dswitching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext
ncep033n85.pdf
NCEP033N85, NCEP033N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =160ADS Dswitching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext
ncep033n85 ncep033n85d.pdf
NCEP033N85, NCEP033N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =160A switching performance. Both conduction and switching power RDS(ON)=3.10m , typical (TO-220)@ VGS=10V losses are minimized due to an ex
Другие MOSFET... NCEP030N30GU , NCEP030N60AGU , NCEP030N85GU , NCEP030N85LL , NCEP031N85M , NCEP033N10 , NCEP033N10D , NCEP033N10M , IRF1010E , NCEP035N10M , NCEP035N12 , NCEP035N12D , NCEP035N12VD , NCEP035N60AG , NCEP035N60AK , NCEP035N60K , NCEP035N72 .
History: AON7458 | NCEAP40T35AVD | CMLDM7585 | SSF3402 | PJP5NA80 | NCEP035N12 | 6N60KG-TN3-R
History: AON7458 | NCEAP40T35AVD | CMLDM7585 | SSF3402 | PJP5NA80 | NCEP035N12 | 6N60KG-TN3-R
Список транзисторов
Обновления
MOSFET: AGM608C | AGM6080D | AGM6080C | AGM6070A | AGM606S | AGM605Q | AGM605F | AGM605C | AGM605A | AGM603F | AGM603D | AGM603C | AGM6035F | AGM6035A | AGM602C | AGM40P75D
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