NCEP033N85M Datasheet. Specs and Replacement

Type Designator: NCEP033N85M  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 220 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12.5 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm

Package: TO-220

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NCEP033N85M datasheet

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NCEP033N85M

NCEP033N85M, NCEP033N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =160A DS D switching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e... See More ⇒

 4.1. Size:1095K  ncepower
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NCEP033N85M

NCEP033N85, NCEP033N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =160A DS D switching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext... See More ⇒

 4.2. Size:1095K  ncepower
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NCEP033N85M

NCEP033N85, NCEP033N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =160A DS D switching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext... See More ⇒

 4.3. Size:332K  ncepower
ncep033n85 ncep033n85d.pdf pdf_icon

NCEP033N85M

NCEP033N85, NCEP033N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =160A switching performance. Both conduction and switching power RDS(ON)=3.10m , typical (TO-220)@ VGS=10V losses are minimized due to an ex... See More ⇒

Detailed specifications: NCEP030N30GU, NCEP030N60AGU, NCEP030N85GU, NCEP030N85LL, NCEP031N85M, NCEP033N10, NCEP033N10D, NCEP033N10M, IRFB3607, NCEP035N10M, NCEP035N12, NCEP035N12D, NCEP035N12VD, NCEP035N60AG, NCEP035N60AK, NCEP035N60K, NCEP035N72

Keywords - NCEP033N85M MOSFET specs

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