All MOSFET. NCEP033N85M Datasheet

 

NCEP033N85M Datasheet and Replacement


   Type Designator: NCEP033N85M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 160 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12.5 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: TO-220
 

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NCEP033N85M Datasheet (PDF)

 ..1. Size:701K  ncepower
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NCEP033N85M

NCEP033N85M, NCEP033N85MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =160ADS Dswitching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e

 4.1. Size:1095K  ncepower
 ncep033n85d.pdf pdf_icon

NCEP033N85M

NCEP033N85, NCEP033N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =160ADS Dswitching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

 4.2. Size:1095K  ncepower
 ncep033n85.pdf pdf_icon

NCEP033N85M

NCEP033N85, NCEP033N85DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =160ADS Dswitching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext

 4.3. Size:332K  ncepower
 ncep033n85 ncep033n85d.pdf pdf_icon

NCEP033N85M

NCEP033N85, NCEP033N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =160A switching performance. Both conduction and switching power RDS(ON)=3.10m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

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Datasheet: NCEP030N30GU , NCEP030N60AGU , NCEP030N85GU , NCEP030N85LL , NCEP031N85M , NCEP033N10 , NCEP033N10D , NCEP033N10M , TK10A60D , NCEP035N10M , NCEP035N12 , NCEP035N12D , NCEP035N12VD , NCEP035N60AG , NCEP035N60AK , NCEP035N60K , NCEP035N72 .

History: GWM100-01X1-SL | BLF177

Keywords - NCEP033N85M MOSFET datasheet

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