NCEP033N85M Datasheet. Specs and Replacement
Type Designator: NCEP033N85M 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 220 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 160 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12.5 nS
Cossⓘ - Output Capacitance: 1100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
Package: TO-220
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NCEP033N85M substitution
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NCEP033N85M datasheet
ncep033n85m.pdf
NCEP033N85M, NCEP033N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =160A DS D switching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e... See More ⇒
ncep033n85d.pdf
NCEP033N85, NCEP033N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =160A DS D switching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext... See More ⇒
ncep033n85.pdf
NCEP033N85, NCEP033N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =160A DS D switching performance. Both conduction and switching power R =3.10m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext... See More ⇒
ncep033n85 ncep033n85d.pdf
NCEP033N85, NCEP033N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =160A switching performance. Both conduction and switching power RDS(ON)=3.10m , typical (TO-220)@ VGS=10V losses are minimized due to an ex... See More ⇒
Detailed specifications: NCEP030N30GU, NCEP030N60AGU, NCEP030N85GU, NCEP030N85LL, NCEP031N85M, NCEP033N10, NCEP033N10D, NCEP033N10M, IRFB3607, NCEP035N10M, NCEP035N12, NCEP035N12D, NCEP035N12VD, NCEP035N60AG, NCEP035N60AK, NCEP035N60K, NCEP035N72
Keywords - NCEP033N85M MOSFET specs
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