NCEP055N10G - параметры транзистора MOSFET, его аналоги, datasheet

NCEP055N10G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

   Наименование прибора: NCEP055N10G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 120 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 105 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 58 nC
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 400 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0055 Ohm
   Тип корпуса: DFN5X6-8L

Аналог (замена) для NCEP055N10G

NCEP055N10G Datasheet (PDF)

..1. Size:337K ncepower
ncep055n10g.pdf

http://www.ncepower.com NCEP055N10GNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP055N10G uses Super Trench II technology that is VDS =100V,ID =105A uniquely optimized to provide the most efficient high frequency RDS(ON)=4.9m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on

4.1. Size:420K ncepower
ncep055n10u.pdf

NCEP055N10UNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.2m , typical @ VGS=10V losses are minimized due to an extremely low combin

4.2. Size:405K ncepower
ncep055n10.pdf

NCEP055N10, NCEP055N10DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

4.3. Size:790K ncepower
ncep055n10m.pdf

NCEP055N10M, NCEP055N10MDNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =110ADS Dswitching performance. Both conduction and switching power R =5.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an e

4.4. Size:405K ncepower
ncep055n10d.pdf