NCEP070N12 - аналоги и даташиты транзистора

 

NCEP070N12 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: NCEP070N12
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 120 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 390 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
   Тип корпуса: TO-220
 

 Аналог (замена) для NCEP070N12

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCEP070N12 Datasheet (PDF)

 ..1. Size:335K  ncepower
 ncep070n12.pdf pdf_icon

NCEP070N12

NCEP070N12,NCEP070N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.3m , typical (TO-26

 ..2. Size:335K  ncepower
 ncep070n12 ncep070n12d.pdf pdf_icon

NCEP070N12

NCEP070N12,NCEP070N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.3m , typical (TO-26

 0.1. Size:335K  ncepower
 ncep070n12d.pdf pdf_icon

NCEP070N12

NCEP070N12,NCEP070N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.3m , typical (TO-26

 5.1. Size:397K  ncepower
 ncep070n10agu.pdf pdf_icon

NCEP070N12

NCEP070N10AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.35m , typical@ VGS=4.5V losses are minimiz

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... NCEP065N10AGU , NCEP065N10AK , NCEP065N10GU , NCEP065N12AGU , NCEP065N85D , NCEP068N10K , NCEP070N10AGU , NCEP070N10GU , IRF9540 , NCEP070N12D , NCEP072N10A , NCEP075N85AGU , NCEP075N85GU , NCEP078N10AG , NCEP078N10AK , NCEP078N10G , NCEP080N10 .

History: NCEP40PT13GU | NCEP40PT12K | NCEP070N12D | STP11NM65N | NCEP070N10AGU | NP60N04HLF | NP48N055CLE

 

 
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