NCEP070N12 datasheet, аналоги, основные параметры

Наименование производителя: NCEP070N12

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 150 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 120 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 15 ns

Cossⓘ - Выходная емкость: 390 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm

Тип корпуса: TO-220

Аналог (замена) для NCEP070N12

- подборⓘ MOSFET транзистора по параметрам

 

NCEP070N12 даташит

 ..1. Size:335K  ncepower
 ncep070n12.pdf pdf_icon

NCEP070N12

NCEP070N12,NCEP070N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.3m , typical (TO-26

 ..2. Size:335K  ncepower
 ncep070n12 ncep070n12d.pdf pdf_icon

NCEP070N12

NCEP070N12,NCEP070N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.3m , typical (TO-26

 0.1. Size:335K  ncepower
 ncep070n12d.pdf pdf_icon

NCEP070N12

NCEP070N12,NCEP070N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.3m , typical (TO-26

 5.1. Size:397K  ncepower
 ncep070n10agu.pdf pdf_icon

NCEP070N12

NCEP070N10AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.35m , typical@ VGS=4.5V losses are minimiz

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCEP065N10AGU, NCEP065N10AK, NCEP065N10GU, NCEP065N12AGU, NCEP065N85D, NCEP068N10K, NCEP070N10AGU, NCEP070N10GU, IRF630, NCEP070N12D, NCEP072N10A, NCEP075N85AGU, NCEP075N85GU, NCEP078N10AG, NCEP078N10AK, NCEP078N10G, NCEP080N10