NCEP078N10AG datasheet, подбор замены

 ..1. Size:428K  ncepower
 ncep078n10ag.pdf 

NCEP078N10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =75A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.0m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=9.2m , typical@ VGS=4.5V losses are minimized

 3.1. Size:462K  ncepower
 ncep078n10ak.pdf 

NCEP078N10AK NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =75A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.2m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=9.4m , typical@ VGS=4.5V losses are minimized

 4.1. Size:1009K  ncepower
 ncep078n10g.pdf 

NCEP078N10G NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =75A DS D switching performance. Both conduction and switching power R =7.4m , typical@ V =10V DS(ON) GS losses are minimized due to an extremely low combination

 8.1. Size:331K  ncepower
 ncep075n85agu.pdf 

NCEP075N85AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =85V,ID =75A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.6m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.6m , typical @ VGS=4.5V losses are minimiz

 8.2. Size:760K  ncepower
 ncep075n85gu.pdf 

NCEP075N85GU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =75A DS D uniquely optimized to provide the most efficient high frequency R =5.6m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power losses are minimized due to an extremely low combinati

 8.3. Size:305K  ncepower
 ncep072n10.pdf 

http //www.ncepower.com NCEP072N10 NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP072N10 uses Super Trench II technology that is VDS =100V,ID =90A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.8m (typical) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RDS(on) p

 8.4. Size:397K  ncepower
 ncep070n10agu.pdf 

NCEP070N10AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.35m , typical@ VGS=4.5V losses are minimiz

 8.5. Size:335K  ncepower
 ncep070n12.pdf 

NCEP070N12,NCEP070N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.3m , typical (TO-26

 8.6. Size:335K  ncepower
 ncep070n12 ncep070n12d.pdf 

NCEP070N12,NCEP070N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.3m , typical (TO-26

 8.7. Size:335K  ncepower
 ncep070n12d.pdf 

NCEP070N12,NCEP070N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.3m , typical (TO-26

 8.8. Size:627K  ncepower
 ncep072n10a.pdf 

http //www.ncepower.com NCEP072N10A NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP072N10A uses Super Trench II technology that is V =100V,I =88A DS D uniquely optimized to provide the most efficient high frequency R =6.2m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =8.4m (typical) @ V =4.5V DS(ON) GS

 8.9. Size:377K  ncepower
 ncep070n10gu.pdf 

NCEP070N10GU NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =80A switching performance. Both conduction and switching power RDS(ON)=6.6m , typical@ VGS=10V losses are minimized due to an extremely low combinati