NCEP85T30T datasheet, аналоги, основные параметры

Наименование производителя: NCEP85T30T  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 400 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 85 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 300 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 85 ns

Cossⓘ - Выходная емкость: 2040 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0022 Ohm

Тип корпуса: TO-247

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Аналог (замена) для NCEP85T30T

- подборⓘ MOSFET транзистора по параметрам

 

NCEP85T30T даташит

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http //www.ncepower.com NCEP85T15D NCE N-Channel Super Trench Power MOSFET Description The NCEP85T15D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switchi

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