NCEP85T30T Datasheet. Specs and Replacement

Type Designator: NCEP85T30T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 400 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 300 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 85 nS

Cossⓘ - Output Capacitance: 2040 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm

Package: TO-247

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NCEP85T30T datasheet

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NCEP85T30T

http //www.ncepower.com NCEP85T30T NCE N-Channel Super Trench Power MOSFET Description The NCEP85T30T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw... See More ⇒

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NCEP85T30T

NCEP85T30LL NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP85T30LL uses Super Trench technology that is VDS =85V,ID =330A uniquely optimized to provide the most efficient high RDS(ON)=1.6m , typical @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(FOM) switching power losses are min... See More ⇒

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ncep85t35t.pdf pdf_icon

NCEP85T30T

Pb Free Product http //www.ncepower.com NCEP85T35T NCE N-Channel Super Trench Power MOSFET Description The NCEP85T35T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒

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NCEP85T30T

http //www.ncepower.com NCEP85T15D NCE N-Channel Super Trench Power MOSFET Description The NCEP85T15D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switchi... See More ⇒

Detailed specifications: NCEP60T20D, NCEP60T20LL, NCEP8588, NCEP85T10G, NCEP85T15D, NCEP85T25, NCEP85T25VD, NCEP85T30LL, IRF640N, NCEP8814AS, NCEP8818AS, NCEPB302G, NCEPB303GU, NCES120R036T4, NCES120R062T4, QM0930M3, MRF134

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