MRF184S - описание и поиск аналогов

 ..1. Size:194K  motorola
 mrf184 mrf184s.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF184/D The RF MOSFET Line MRF184 RF POWER Field-Effect Transistors MRF184S N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen- cies to 1.0 GHz. The high gain and broadband performance of these devices 60 W, 1.0 GHz makes them ideal for large signal, co

 8.1. Size:194K  motorola
 mrf184rev2.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF184/D The RF MOSFET Line MRF184 RF POWER Field-Effect Transistors MRF184S N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen- cies to 1.0 GHz. The high gain and broadband performance of these devices 60 W, 1.0 GHz makes them ideal for large signal, co

 9.1. Size:206K  motorola
 mrf183re.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF183/D The RF MOSFET Line RF Power MRF183 Field Effect Transistors MRF183S N Channel Enhancement Mode Lateral MOSFETs High Gain, Rugged Device 45 WATTS, 1.0 GHz, 28 VOLTS Broadband Performance from HF to 1 GHz LATERAL N CHANNEL Bottom Side Source Eliminates DC Isolators, Reducing Common BROADBAND

 9.2. Size:56K  motorola
 mrf185.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF185/D Advance Information MRF185 The RF MOSFET Line RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS N Channel Enhancement Mode Lateral MOSFET LATERAL N CHANNEL BROADBAND High Gain, Rugged Device RF POWER MOSFET Broadband Performance from HF to 1 GHz Bottom Side Source Eliminates DC Iso

 9.3. Size:133K  motorola
 mrf182 mrf182s.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF182/D The RF MOSFET Line RF Power MRF182 Field Effect Transistors MRF182S N Channel Enhancement Mode Lateral MOSFETs High Gain, Rugged Device 30 W, 1.0 GHz Broadband Performance from HF to 1 GHz LATERAL N CHANNEL Bottom Side Source Eliminates DC Isolators, Reducing Common BROADBAND Mode Inductan

 9.4. Size:56K  motorola
 mrf185rev1.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF185/D Advance Information MRF185 The RF MOSFET Line RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS N Channel Enhancement Mode Lateral MOSFET LATERAL N CHANNEL BROADBAND High Gain, Rugged Device RF POWER MOSFET Broadband Performance from HF to 1 GHz Bottom Side Source Eliminates DC Iso

 9.5. Size:221K  motorola
 mrf183rev6.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF183/D The RF MOSFET Line RF Power MRF183 Field Effect Transistors MRF183S N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen- cies to 1.0 GHz. The high gain and broadband performance of these devices 45 W, 1.0 GHz makes ithem ideal for large signal

 9.6. Size:133K  motorola
 mrf182rev5.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF182/D The RF MOSFET Line RF Power MRF182 Field Effect Transistors MRF182S N Channel Enhancement Mode Lateral MOSFETs High Gain, Rugged Device 30 W, 1.0 GHz Broadband Performance from HF to 1 GHz LATERAL N CHANNEL Bottom Side Source Eliminates DC Isolators, Reducing Common BROADBAND Mode Inductan

 9.7. Size:206K  motorola
 mrf183 mrf183s.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF183/D The RF MOSFET Line RF Power MRF183 Field Effect Transistors MRF183S N Channel Enhancement Mode Lateral MOSFETs High Gain, Rugged Device 45 WATTS, 1.0 GHz, 28 VOLTS Broadband Performance from HF to 1 GHz LATERAL N CHANNEL Bottom Side Source Eliminates DC Isolators, Reducing Common BROADBAND

 9.8. Size:209K  motorola
 mrf182re.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF182/D The RF MOSFET Line RF Power MRF182 Field Effect Transistors MRF182S N Channel Enhancement Mode Lateral MOSFETs High Gain, Rugged Device 30 WATTS, 1.0 GHz, Broadband Performance from HF to 1 GHz 28 VOLTS LATERAL N CHANNEL Bottom Side Source Eliminates DC Isolators, Reducing Common BROADBAND

 9.9. Size:373K  freescale
 mrf18085a.pdf 

Document Number MRF18085A Freescale Semiconductor Rev. 8, 10/2008 Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF18085ALSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/ cellular radio an

 9.10. Size:368K  freescale
 mrf18060a.pdf 

Document Number MRF18060A Freescale Semiconductor Rev. 11, 10/2008 Technical Data RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from MRF18060ALR3 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and W