MRF184S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MRF184S
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 118 W
Предельно допустимое напряжение сток-исток |Uds|: 65 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 7 A
Максимальная температура канала (Tj): 200 °C
Выходная емкость (Cd): 44 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.4545 Ohm
Тип корпуса: CASE360B-01
MRF184S Datasheet (PDF)
mrf184 mrf184s.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF184/DThe RF MOSFET LineMRF184RF POWER Field-Effect TransistorsMRF184SNChannel EnhancementMode Lateral MOSFETsDesigned for broadband commercial and industrial applications at frequen-cies to 1.0 GHz. The high gain and broadband performance of these devices 60 W, 1.0 GHzmakes them ideal for largesignal, co
mrf184rev2.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF184/DThe RF MOSFET LineMRF184RF POWER Field-Effect TransistorsMRF184SNChannel EnhancementMode Lateral MOSFETsDesigned for broadband commercial and industrial applications at frequen-cies to 1.0 GHz. The high gain and broadband performance of these devices 60 W, 1.0 GHzmakes them ideal for largesignal, co
mrf183re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF183/DThe RF MOSFET LineRF PowerMRF183Field Effect TransistorsMRF183SNChannel EnhancementMode LateralMOSFETs High Gain, Rugged Device45 WATTS, 1.0 GHz, 28 VOLTS Broadband Performance from HF to 1 GHzLATERAL NCHANNEL Bottom Side Source Eliminates DC Isolators, Reducing Common BROADBAND
mrf185.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF185/DAdvance InformationMRF185The RF MOSFET LineRF POWERField-Effect Transistor85 WATTS, 1.0 GHz28 VOLTSNChannel EnhancementMode Lateral MOSFETLATERAL NCHANNELBROADBAND High Gain, Rugged DeviceRF POWER MOSFET Broadband Performance from HF to 1 GHz Bottom Side Source Eliminates DC Iso
mrf182 mrf182s.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF182/DThe RF MOSFET LineRF PowerMRF182Field Effect TransistorsMRF182SNChannel EnhancementMode LateralMOSFETs High Gain, Rugged Device30 W, 1.0 GHz Broadband Performance from HF to 1 GHzLATERAL NCHANNEL Bottom Side Source Eliminates DC Isolators, Reducing Common BROADBAND Mode Inductan
mrf185rev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF185/DAdvance InformationMRF185The RF MOSFET LineRF POWERField-Effect Transistor85 WATTS, 1.0 GHz28 VOLTSNChannel EnhancementMode Lateral MOSFETLATERAL NCHANNELBROADBAND High Gain, Rugged DeviceRF POWER MOSFET Broadband Performance from HF to 1 GHz Bottom Side Source Eliminates DC Iso
mrf183rev6.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF183/DThe RF MOSFET LineRF PowerMRF183Field Effect TransistorsMRF183SNChannel EnhancementMode LateralMOSFETsDesigned for broadband commercial and industrial applications at frequen-cies to 1.0 GHz. The high gain and broadband performance of these devices45 W, 1.0 GHzmakes ithem ideal for largesignal
mrf182rev5.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF182/DThe RF MOSFET LineRF PowerMRF182Field Effect TransistorsMRF182SNChannel EnhancementMode LateralMOSFETs High Gain, Rugged Device30 W, 1.0 GHz Broadband Performance from HF to 1 GHzLATERAL NCHANNEL Bottom Side Source Eliminates DC Isolators, Reducing Common BROADBAND Mode Inductan
mrf183 mrf183s.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF183/DThe RF MOSFET LineRF PowerMRF183Field Effect TransistorsMRF183SNChannel EnhancementMode LateralMOSFETs High Gain, Rugged Device45 WATTS, 1.0 GHz, 28 VOLTS Broadband Performance from HF to 1 GHzLATERAL NCHANNEL Bottom Side Source Eliminates DC Isolators, Reducing Common BROADBAND
mrf182re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF182/DThe RF MOSFET LineRF PowerMRF182Field Effect TransistorsMRF182SNChannel EnhancementMode LateralMOSFETs High Gain, Rugged Device30 WATTS, 1.0 GHz, Broadband Performance from HF to 1 GHz28 VOLTSLATERAL NCHANNEL Bottom Side Source Eliminates DC Isolators, Reducing Common BROADBAND
mrf18085a.pdf
Document Number: MRF18085AFreescale SemiconductorRev. 8, 10/2008Technical DataRF Power Field Effect TransistorN-Channel Enhancement-Mode Lateral MOSFETMRF18085ALSR3Designed for GSM and GSM EDGE base station applications withfrequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA andmulticarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio an
mrf18060a.pdf
Document Number: MRF18060AFreescale SemiconductorRev. 11, 10/2008Technical DataRF Power Field Effect TransistorN-Channel Enhancement-Mode Lateral MOSFETDesigned for PCN and PCS base station applications with frequencies fromMRF18060ALR31800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifierapplications. To be used in Class AB for PCN - PCS/cellular radio and W
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