All MOSFET. MRF184S Datasheet

 

MRF184S Datasheet and Replacement


   Type Designator: MRF184S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 118 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 200 °C
   Cossⓘ - Output Capacitance: 44 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4545 Ohm
   Package: CASE360B-01
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MRF184S Datasheet (PDF)

 ..1. Size:194K  motorola
mrf184 mrf184s.pdf pdf_icon

MRF184S

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF184/DThe RF MOSFET LineMRF184RF POWER Field-Effect TransistorsMRF184SNChannel EnhancementMode Lateral MOSFETsDesigned for broadband commercial and industrial applications at frequen-cies to 1.0 GHz. The high gain and broadband performance of these devices 60 W, 1.0 GHzmakes them ideal for largesignal, co

 8.1. Size:194K  motorola
mrf184rev2.pdf pdf_icon

MRF184S

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF184/DThe RF MOSFET LineMRF184RF POWER Field-Effect TransistorsMRF184SNChannel EnhancementMode Lateral MOSFETsDesigned for broadband commercial and industrial applications at frequen-cies to 1.0 GHz. The high gain and broadband performance of these devices 60 W, 1.0 GHzmakes them ideal for largesignal, co

 9.1. Size:206K  motorola
mrf183re.pdf pdf_icon

MRF184S

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF183/DThe RF MOSFET LineRF PowerMRF183Field Effect TransistorsMRF183SNChannel EnhancementMode LateralMOSFETs High Gain, Rugged Device45 WATTS, 1.0 GHz, 28 VOLTS Broadband Performance from HF to 1 GHzLATERAL NCHANNEL Bottom Side Source Eliminates DC Isolators, Reducing Common BROADBAND

 9.2. Size:56K  motorola
mrf185.pdf pdf_icon

MRF184S

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF185/DAdvance InformationMRF185The RF MOSFET LineRF POWERField-Effect Transistor85 WATTS, 1.0 GHz28 VOLTSNChannel EnhancementMode Lateral MOSFETLATERAL NCHANNELBROADBAND High Gain, Rugged DeviceRF POWER MOSFET Broadband Performance from HF to 1 GHz Bottom Side Source Eliminates DC Iso

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: OSG60R340FT3F | HY1908S | AP0904GH-HF | FIR6N40FG | FHF7N60A | AM110P08-11B | GTT8205S

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