FQD3N60CTMWS - аналоги и даташиты транзистора

 

FQD3N60CTMWS - Даташиты. Аналоги. Основные параметры


   Наименование производителя: FQD3N60CTMWS
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 2.4 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 3.4 Ohm
   Тип корпуса: TO252 DPAK
 

 Аналог (замена) для FQD3N60CTMWS

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQD3N60CTMWS Datasheet (PDF)

 4.1. Size:500K  fairchild semi
 fqd3n60ctm ws.pdf pdf_icon

FQD3N60CTMWS

November 2013FQD3N60CTM_WSN-Channel QFET MOSFET600 V, 2.4 A, 3.4 Features Description 2.4 A, 600 V, RDS(on) = 3.4 (Max.) @ VGS = 10 V, ID = 1.2 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductors proprietary Low Gate Charge (Typ. 10.5 nC)planar stripe and DMOS technology. This advanced Low Crss (Typ. 5 pF)MOSFET te

 4.2. Size:954K  onsemi
 fqd3n60ctm-ws.pdf pdf_icon

FQD3N60CTMWS

FQD3N60CTM-WSN-Channel QFET MOSFET Description600 V, 2.4 A, 3.4 This N-Channel enhancement mode power MOSFET is produced using ON Semiconductors proprietary planar Featuresstripe and DMOS technology. This advanced MOSFET 2.4 A, 600 V, RDS(on) = 3.4 (Max.) @ VGS = 10 V, ID = 1.2 Atechnology has been especially tailored to reduce on-state resistance, and to pro

 7.1. Size:575K  fairchild semi
 fqd3n60 fqu3n60.pdf pdf_icon

FQD3N60CTMWS

April 2000TMQFETQFETQFETQFETFQD3N60 / FQU3N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.4A, 600V, RDS(on) = 3.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology h

 7.2. Size:573K  fairchild semi
 fqd3n60tm fqu3n60 fqu3n60tu.pdf pdf_icon

FQD3N60CTMWS

April 2000TMQFETQFETQFETQFETFQD3N60 / FQU3N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.4A, 600V, RDS(on) = 3.6 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 10 nC)planar stripe, DMOS technology. Low Crss ( typical 5.5 pF)This advanced technology h

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... FQD2N100 , FQD2N60C , FQPF3N25 , FQD2N80 , FQP4N20L , FQD2N90 , FQD2P40 , FQD30N06 , IRF830 , FQB9P25 , FQD3P50 , FQD3P50TMF085 , FQD4N20 , FQP11P06 , FQD4N25 , FQD4P25 , FQD5N20L .

History: FQB9P25 | FRL130R | BUZ10L | IPW65R095C7 | FSF254R | 2SK2368 | NTMFS4C55N

 

 
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