FQD6N25 - Даташиты. Аналоги. Основные параметры
Наименование производителя: FQD6N25
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 45 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.4 A
Tj ⓘ - Максимальная температура канала: 150 °C
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1 Ohm
Тип корпуса: TO252 DPAK
Аналог (замена) для FQD6N25
FQD6N25 Datasheet (PDF)
fqd6n25tf fqd6n25tm fqd6n25 fqu6n25.pdf

October 2008QFETFQD6N25 / FQU6N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.4A, 250V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.6 nC)planar stripe, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has been especia
fqd6n40ctf fqd6n40ctm fqd6n40c fqu6n40c fqu6n40ctu.pdf

October 2008QFETFQD6N40C / FQU6N40C 400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 400V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16nC)planar stripe, DMOS technology. Low Crss ( typical 15pF)This advanced technology has been especiall
fqd6n60ctm.pdf

QFETFQD6N60C600V N-Channel MOSFETFeatures Description 4 A, 600 V, RDS(on) = 2.0 @ VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 16 nC )stripe, DMOS technology.This advanced technology has been especially tailored to Low Crss ( typical 7 pF)minimize on-s
fqd6n50ctf fqd6n50ctm fqd6n50c fqu6n50c.pdf

October 2008QFETFQD6N50C / FQU6N50C500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.5A, 500V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge (typical 19nC)planar stripe, DMOS technology. Low Crss (typical 15pF)This advanced technology has been especially t
Другие MOSFET... FQD4N25 , FQD4P25 , FQD5N20L , FQP12P10 , FQD5N60C , FDS4675 , FQD5P10 , FQD5P20 , 8N60 , FQD6N40C , HUFA76419DF085 , FQD6N50C , FQD7N10L , HUFA75645S3S , FQD7N20L , IRFS450B , FQD7N30 .
History: APT40M35PVR | BUK581-100A | FQD6N40C | ATP103 | CS220N03MD | 5LN01C
History: APT40M35PVR | BUK581-100A | FQD6N40C | ATP103 | CS220N03MD | 5LN01C



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