All MOSFET. FQD6N25 Datasheet

 

FQD6N25 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQD6N25

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 4.4 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: TO252, DPAK

FQD6N25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQD6N25 Datasheet (PDF)

1.1. fqd6n25tf fqd6n25tm fqd6n25 fqu6n25.pdf Size:798K _fairchild_semi

FQD6N25
FQD6N25

October 2008 QFET® FQD6N25 / FQU6N25 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 4.4A, 250V, RDS(on) = 1.0Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.6 nC) planar stripe, DMOS technology. • Low Crss ( typical 7.5 pF) This advanced technology has been especia

5.1. fqd6n50ctf fqd6n50ctm fqd6n50c fqu6n50c.pdf Size:757K _fairchild_semi

FQD6N25
FQD6N25

October 2008 QFET® FQD6N50C / FQU6N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.5A, 500V, RDS(on) = 1.2 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge (typical 19nC) planar stripe, DMOS technology. • Low Crss (typical 15pF) This advanced technology has been especially t

5.2. fqd6n60c.pdf Size:678K _fairchild_semi

FQD6N25
FQD6N25

® QFET FQD6N60C 600V N-Channel MOSFET Features Description • 4 A, 600 V, RDS(on) = 2.0 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 16 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to • Low Crss ( typical 7 pF) minimize on-s

 5.3. fqd6n60ctm.pdf Size:679K _fairchild_semi

FQD6N25
FQD6N25

® QFET FQD6N60C 600V N-Channel MOSFET Features Description • 4 A, 600 V, RDS(on) = 2.0 Ω @ VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 16 nC ) stripe, DMOS technology. This advanced technology has been especially tailored to • Low Crss ( typical 7 pF) minimize on-s

5.4. fqd6n40ctf fqd6n40ctm fqd6n40c fqu6n40c fqu6n40ctu.pdf Size:654K _fairchild_semi

FQD6N25
FQD6N25

October 2008 QFET® FQD6N40C / FQU6N40C 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.5A, 400V, RDS(on) = 1.0 Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 16nC) planar stripe, DMOS technology. • Low Crss ( typical 15pF) This advanced technology has been especiall

 5.5. fqd6n40tf fqd6n40tm.pdf Size:723K _fairchild_semi

FQD6N25
FQD6N25

April 2000 TM QFET QFET QFET QFET FQD6N40 / FQU6N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 4.2A, 400V, RDS(on) = 1.15Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13 nC) planar stripe, DMOS technology. • Low Crss ( typical 9.5 pF) This advanced technolog

Datasheet: FQD4N25 , FQD4P25 , FQD5N20L , FQP12P10 , FQD5N60C , FDS4675 , FQD5P10 , FQD5P20 , 2SK3878 , FQD6N40C , HUFA76419D_F085 , FQD6N50C , FQD7N10L , HUFA75645S3S , FQD7N20L , IRFS450B , FQD7N30 .

 

 
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