NCE020N30K - описание и поиск аналогов

Pb Free Product http //www.ncepower.com NCE020N30K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE020N30K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =30V,I =180A DS D R =1.9 m @ V =10V (Typ) Schematic diagram DS(ON) GS R =2.6 m @ V =4.5V

http //www.ncepower.com NCE0205IA NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0205IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS = 200V,ID =5A RDS(ON)

Pb Free Product http //www.ncepower.com NCE0202ZA NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE0202ZA uses advanced trench technology and G design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. S General Features Schematic diagram VDS = 200V,ID =2A RDS(ON)

Pb Free Product http //www.ncepower.com NCE0208IA NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0208IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

Pb Free Product http //www.ncepower.com NCE0208KA NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0208KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

http //www.ncepower.com NCE0202M NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0202M uses advanced trench technology and D design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. G General Features VDS = 200V,ID =2A S RDS(ON)

Pb Free Product http //www.ncepower.com NCE0203S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0203S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =3.9A RDS(ON)