Справочник MOSFET. NCE020N30K

 

NCE020N30K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE020N30K
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 135 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 180 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 156.1 nC
   trⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 1049 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0034 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для NCE020N30K

 

 

NCE020N30K Datasheet (PDF)

 ..1. Size:707K  ncepower
 nce020n30k.pdf

NCE020N30K NCE020N30K

Pb Free Producthttp://www.ncepower.comNCE020N30KNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE020N30K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =180ADS DR =1.9 m @ V =10V (Typ) Schematic diagramDS(ON) GSR =2.6 m @ V =4.5V

 8.1. Size:305K  ncepower
 nce0205ia.pdf

NCE020N30K NCE020N30K

http://www.ncepower.com NCE0205IANCE N-Channel Enhancement Mode Power MOSFET Description The NCE0205IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS = 200V,ID =5A RDS(ON)

 8.2. Size:287K  ncepower
 nce0202za.pdf

NCE020N30K NCE020N30K

Pb Free Producthttp://www.ncepower.com NCE0202ZANCE N-Channel Enhancement Mode Power MOSFET DDescription The NCE0202ZA uses advanced trench technology and Gdesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 200V,ID =2A RDS(ON)

 8.3. Size:322K  ncepower
 nce0208ia.pdf

NCE020N30K NCE020N30K

Pb Free Producthttp://www.ncepower.com NCE0208IANCE N-Channel Enhancement Mode Power MOSFET Description The NCE0208IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

 8.4. Size:433K  ncepower
 nce0208ka.pdf

NCE020N30K NCE020N30K

Pb Free Producthttp://www.ncepower.com NCE0208KANCE N-Channel Enhancement Mode Power MOSFET Description The NCE0208KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON)

 8.5. Size:283K  ncepower
 nce0202m.pdf

NCE020N30K NCE020N30K

http://www.ncepower.com NCE0202MNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0202M uses advanced trench technology and Ddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GGeneral Features VDS = 200V,ID =2A SRDS(ON)

 8.6. Size:324K  ncepower
 nce0203s.pdf

NCE020N30K NCE020N30K

Pb Free Producthttp://www.ncepower.com NCE0203SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE0203S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =3.9A RDS(ON)

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