NCE020N30K Datasheet. Specs and Replacement

Type Designator: NCE020N30K  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 135 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 1049 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm

Package: TO-252

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NCE020N30K datasheet

 ..1. Size:707K  ncepower
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NCE020N30K

Pb Free Product http //www.ncepower.com NCE020N30K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE020N30K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =30V,I =180A DS D R =1.9 m @ V =10V (Typ) Schematic diagram DS(ON) GS R =2.6 m @ V =4.5V ... See More ⇒

 8.1. Size:305K  ncepower
nce0205ia.pdf pdf_icon

NCE020N30K

http //www.ncepower.com NCE0205IA NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0205IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Schematic diagram General Features VDS = 200V,ID =5A RDS(ON) ... See More ⇒

 8.2. Size:287K  ncepower
nce0202za.pdf pdf_icon

NCE020N30K

Pb Free Product http //www.ncepower.com NCE0202ZA NCE N-Channel Enhancement Mode Power MOSFET D Description The NCE0202ZA uses advanced trench technology and G design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. S General Features Schematic diagram VDS = 200V,ID =2A RDS(ON) ... See More ⇒

 8.3. Size:322K  ncepower
nce0208ia.pdf pdf_icon

NCE020N30K

Pb Free Product http //www.ncepower.com NCE0208IA NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0208IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =8A RDS(ON) ... See More ⇒

Detailed specifications: HPP080NE5SPA, HPP120N08STA, HPW080NE5SPA, HPW750N20SPA, HQB7N65C, HQF7N65C, IRFD24N, NCE01ND03S, 2SK3878, NCE025N30G, NCE025N30K, NCE035N30G, NCE035N30K, NCE042N30K, NCE048N30Q, NCE1220SP, NCE1227SP

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