NCE2006NE datasheet, аналоги, основные параметры

Наименование производителя: NCE2006NE  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.25 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 13 ns

Cossⓘ - Выходная емкость: 150 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.027 Ohm

Тип корпуса: SOT23-6L

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Аналог (замена) для NCE2006NE

- подборⓘ MOSFET транзистора по параметрам

 

NCE2006NE даташит

 ..1. Size:757K  ncepower
 nce2006ne.pdf pdf_icon

NCE2006NE

NCE2006NE http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2006NE uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features V = 20V,I =7A DS D

 7.1. Size:313K  ncepower
 nce2006y.pdf pdf_icon

NCE2006NE

http //www.ncepower.com NCE2006Y NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2006Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =6A RDS(ON)

 8.1. Size:346K  ncepower
 nce2008e.pdf pdf_icon

NCE2006NE

Pb Free Product http //www.ncepower.com NCE2008E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2008E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features

 8.2. Size:344K  ncepower
 nce2007n.pdf pdf_icon

NCE2006NE

Pb Free Product http //www.ncepower.com NCE2007N SNCE N-Channel Enhancement Mode Power MOSFET Description D1 D2 The NCE2007N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2 voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram Ge

ПОКАЗАТЬ ЕЩЁ

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