All MOSFET. NCE2006NE Datasheet

 

NCE2006NE Datasheet and Replacement


   Type Designator: NCE2006NE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: SOT23-6L
 

 NCE2006NE substitution

   - MOSFET ⓘ Cross-Reference Search

 

NCE2006NE Datasheet (PDF)

 ..1. Size:757K  ncepower
nce2006ne.pdf pdf_icon

NCE2006NE

NCE2006NEhttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE2006NE uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications .It is ESD protested.Schematic diagramGeneral Features V = 20V,I =7ADS D

 7.1. Size:313K  ncepower
nce2006y.pdf pdf_icon

NCE2006NE

http://www.ncepower.com NCE2006YNCE N-Channel Enhancement Mode Power MOSFET Description The NCE2006Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =6A RDS(ON)

 8.1. Size:346K  ncepower
nce2008e.pdf pdf_icon

NCE2006NE

Pb Free Producthttp://www.ncepower.com NCE2008ENCE N-Channel Enhancement Mode Power MOSFET Description The NCE2008E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features

 8.2. Size:344K  ncepower
nce2007n.pdf pdf_icon

NCE2006NE

Pb Free Producthttp://www.ncepower.com NCE2007NSNCE N-Channel Enhancement Mode Power MOSFET Description D1D2The NCE2007N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram Ge

Datasheet: NCE035N30K , NCE042N30K , NCE048N30Q , NCE1220SP , NCE1227SP , NCE1230SP , NCE18ND11U , NCE2004NE , IRF530 , NCE2007NS , NCE2008E , NCE2008N , NCE20ND06 , NCE20ND07U , NCE20ND08U , NCE20ND15Q , NCE20PD05 .

History: SRT06N095LDG

Keywords - NCE2006NE MOSFET datasheet

 NCE2006NE cross reference
 NCE2006NE equivalent finder
 NCE2006NE lookup
 NCE2006NE substitution
 NCE2006NE replacement

 

 
Back to Top

 


 
.