NCE2006NE MOSFET PDF: N-Ch, 20V, 7A. Datasheet. Full specification with pinout and replacement list

NCE2006NE Specs and Replacement

   Type Designator: NCE2006NE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: SOT23-6L

NCE2006NE substitution

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NCE2006NE datasheet

..1. Size:757K ncepower
nce2006ne.pdf pdf_icon

NCE2006NE http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2006NE uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features V = 20V,I =7A DS D ... See More ⇒

7.1. Size:313K ncepower
nce2006y.pdf pdf_icon

http //www.ncepower.com NCE2006Y NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2006Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =6A RDS(ON) ... See More ⇒

8.1. Size:346K ncepower
nce2008e.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE2008E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2008E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. Schematic diagram General Features ... See More ⇒

8.2. Size:344K ncepower
nce2007n.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE2007N SNCE N-Channel Enhancement Mode Power MOSFET Description D1 D2 The NCE2007N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G1 G2 voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2 Schematic diagram Ge... See More ⇒