NCE035N30K
MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE035N30K
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 115
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 105
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 55
nC
trⓘ - Rise Time: 14
nS
Cossⓘ -
Output Capacitance: 352
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007
Ohm
Package:
TO-252
NCE035N30K
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE035N30K
Datasheet (PDF)
..1. Size:754K ncepower
nce035n30k.pdf 
NCE035N30Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE035N30K uses advanced trench technology andGeneral Featuresdesign to provide excellent R with low gate charge. It can V =30V,I =105ADS(ON) DS Dbe used in a wide variety of applications. R =3.0 m (typical) @ V =10VDS(ON) GSR =5.2 m (typical) @ V =4.5VApplication DS(ON) GS
5.1. Size:751K ncepower
nce035n30g.pdf
NCE035N30Ghttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE025N30G uses advanced trench technology andGeneral Featuresdesign to provide excellent R with low gate charge. It can V =30V,I =100ADS(ON) DS Dbe used in a wide variety of applications. R =3.0m (typical) @ V =10VDS(ON) GSR =5.2m (typical) @ V =4.5VApplication DS(ON) GS
8.1. Size:639K ncepower
nce035p40gu.pdf
http://www.ncepower.comNCE035P40GUNCE P-Channel Enhancement Mode Power MOSFETDescription General FeaturesThe NCE035P40GU uses advanced trench technology and V =-40V,I =-130ADS Ddesign to provide excellent R with low gate charge. It R
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