All MOSFET. IRF530 Datasheet

 

IRF530 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF530

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 90 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 16 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 26 nC

Drain-Source Capacitance (Cd): 900 pF

Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm

Package: TO220

IRF530 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF530 Datasheet (PDF)

0.1. irf530 mot.pdf Size:173K _motorola

IRF530
IRF530

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby IRF530/DAdvance InformationIRF530TMOS E-FET.Power Field Effect TransistorN Channel Enhancement Mode Silicon GateTMOS POWER

0.2. irf530.rev1.1.pdf Size:166K _motorola

IRF530
IRF530

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby IRF530/DProduct PreviewIRF530TMOS E-FET.Power Field Effect TransistorN Channel Enhancement Mode Silicon GateTMOS POWER FET

 0.3. irf530n 1.pdf Size:98K _philips

IRF530
IRF530

Philips Semiconductors Product specification N-channel TrenchMOS transistor IRF530N FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 17 AgRDS(ON) 110 msGENERAL DESCRIPTION PINNING SOT78 (TO220AB)N-channel enhancement mode PIN DESCRIPTIONtabfield-effect po

0.4. irf530.pdf Size:53K _st

IRF530
IRF530

IRF530IRF530FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE VDSS RDS(on) IDIRF530 100 V

 0.5. irf530 irf531 irf532 irf533-fi.pdf Size:276K _st

IRF530
IRF530

0.6. irf530fp.pdf Size:77K _st

IRF530
IRF530

IRF530FPN - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORTYPE VDSS RDS(on) IDIRF530FP 100 V

0.7. irf530.pdf Size:180K _fairchild_semi

IRF530
IRF530

0.8. irf530a.pdf Size:254K _fairchild_semi

IRF530
IRF530

IRF530AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input CapacitanceID = 14 A Improved Gate Charge Extended Safe Operating AreaTO-220 175 C Operating TemperatureA (Max.) @ VDS = 100V Lower Leakage Current : 10 Lower RDS(ON) : 0.092 (Typ.)1231.Gate 2. Drain 3. Sourc

0.9. irf530.pdf Size:175K _international_rectifier

IRF530
IRF530

0.10. irf5305.pdf Size:124K _international_rectifier

IRF530
IRF530

PD - 91385BIRF5305HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.06 P-ChannelG Fully Avalanche RatedID = -31ASDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area

0.11. irf530n.pdf Size:212K _international_rectifier

IRF530
IRF530

PD - 91351IRF530NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 90mG Fast Switching Fully Avalanche RatedID = 17ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistanc

0.12. irf530s.pdf Size:197K _international_rectifier

IRF530
IRF530

IRF530S, SiHF530SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 10 V 0.16 Available in Tape and Reel Qg (Max.) (nC) 26 Dynamic dV/dt RatingQgs (nC) 5.5 Repetitive Avalanche Rated 175 C Operating TemperatureQgd (nC) 11 Fast SwitchingConfigu

0.13. irf530npbf.pdf Size:183K _international_rectifier

IRF530
IRF530

PD - 94962IRF530NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 100Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 90ml Fast SwitchingGl Fully Avalanche RatedID = 17Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremel

0.14. irf530nspbf.pdf Size:279K _international_rectifier

IRF530
IRF530

PD - 95100IRF530NSPbFIRF530NLPbFHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 100Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 90mGl Fast Switchingl Fully Avalanche RatedID = 17Al Lead-Free SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques to achi

0.15. irf530ns.pdf Size:178K _international_rectifier

IRF530
IRF530

PD - 91352AIRF530NS/LHEXFET Power MOSFET Advanced Process Technology DVDSS =100V Surface Mount (IRF530NS) Low-profile through-hole (IRF530NL) 175C Operating TemperatureRDS(on) = 0.11G Fast Switching Fully Avalanche RatedID = 17ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely low o

0.16. irf530spbf.pdf Size:1851K _international_rectifier

IRF530
IRF530

PD- 95982IRF530SPbF Lead-Free12/21/04Document Number: 91020 www.vishay.com1IRF530SPbFDocument Number: 91020 www.vishay.com2IRF530SPbFDocument Number: 91020 www.vishay.com3IRF530SPbFDocument Number: 91020 www.vishay.com4IRF530SPbFDocument Number: 91020 www.vishay.com5IRF530SPbFDocument Number: 91020 www.vishay.com6IRF530SPbFPeak Diode Recovery

0.17. irf5305pbf.pdf Size:182K _international_rectifier

IRF530
IRF530

PD - 94788IRF5305PbFHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.06 P-ChannelG Fully Avalanche RatedID = -31A Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance pe

0.18. irf5305s.pdf Size:171K _international_rectifier

IRF530
IRF530

PD - 91386CIRF5305S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF5305S)VDSS = -55V Low-profile through-hole (IRF5305L) 175C Operating TemperatureRDS(on) = 0.06 Fast SwitchingG P-ChannelID = -31A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve

0.19. irf5305lpbf irf5305spbf.pdf Size:700K _international_rectifier

IRF530
IRF530

PD - 95957IRF5305S/LPbF Lead-Freewww.irf.com 14/21/05IRF5305S/LPbF2 www.irf.comIRF5305S/LPbFwww.irf.com 3IRF5305S/LPbF4 www.irf.comIRF5305S/LPbFwww.irf.com 5IRF5305S/LPbF6 www.irf.comIRF5305S/LPbFwww.irf.com 7IRF5305S/LPbFD2Pak Package OutlineD2Pak Part Marking InformationT HIS IS AN IRF530S WIT HPART NUMBERLOT CODE 8024INTERNATIONALASSE

0.20. irf530pbf.pdf Size:2177K _international_rectifier

IRF530
IRF530

PD - 94931IRF530PbF Lead-Free1/8/04Document Number: 91019 www.vishay.com1IRF530PbFDocument Number: 91019 www.vishay.com2IRF530PbFDocument Number: 91019 www.vishay.com3IRF530PbFDocument Number: 91019 www.vishay.com4IRF530PbFDocument Number: 91019 www.vishay.com5IRF530PbFDocument Number: 91019 www.vishay.com6IRF530PbFTO-220AB Package OutlineD

0.21. irfp130-131 irf530-533.pdf Size:360K _samsung

IRF530
IRF530

0.22. irf530a.pdf Size:944K _samsung

IRF530
IRF530

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input CapacitanceID = 14 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.092 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum

0.23. irf530s sihf530s.pdf Size:171K _vishay

IRF530
IRF530

IRF530S, SiHF530SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 100 Surface MountRDS(on) ()VGS = 10 V 0.16 Available in Tape and Reel Qg (Max.) (nC) 26 Dynamic dV/dt RatingQgs (nC) 5.5 Repetitive Avalanche Rated 175 C Operating TemperatureQgd (nC) 11 Fast SwitchingConfigu

0.24. irf530 sihf530.pdf Size:201K _vishay

IRF530
IRF530

IRF530, SiHF530Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 100Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.16RoHS* 175 C Operating TemperatureQg (Max.) (nC) 26COMPLIANT Fast SwitchingQgs (nC) 5.5 Ease of ParallelingQgd (nC) 11 Simple Drive RequirementsConfiguration Single Complian

0.25. irf5305spbf irf5305lpbf.pdf Size:700K _infineon

IRF530
IRF530

PD - 95957IRF5305S/LPbF Lead-Freewww.irf.com 14/21/05IRF5305S/LPbF2 www.irf.comIRF5305S/LPbFwww.irf.com 3IRF5305S/LPbF4 www.irf.comIRF5305S/LPbFwww.irf.com 5IRF5305S/LPbF6 www.irf.comIRF5305S/LPbFwww.irf.com 7IRF5305S/LPbFD2Pak Package OutlineD2Pak Part Marking InformationT HIS IS AN IRF530S WIT HPART NUMBERLOT CODE 8024INTERNATIONALASSE

0.26. irf530npbf.pdf Size:183K _infineon

IRF530
IRF530

PD - 94962IRF530NPbFHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-ResistanceVDSS = 100Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 90ml Fast SwitchingGl Fully Avalanche RatedID = 17Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremel

0.27. irf5305pbf.pdf Size:182K _infineon

IRF530
IRF530

PD - 94788IRF5305PbFHEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.06 P-ChannelG Fully Avalanche RatedID = -31A Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance pe

0.28. irf530nspbf irf530nlpbf.pdf Size:279K _infineon

IRF530
IRF530

PD - 95100IRF530NSPbFIRF530NLPbFHEXFET Power MOSFETl Advanced Process TechnologyDVDSS = 100Vl Ultra Low On-Resistancel Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) = 90mGl Fast Switchingl Fully Avalanche RatedID = 17Al Lead-Free SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques to achi

0.29. irf530 rf1s530sm.pdf Size:74K _intersil

IRF530
IRF530

IRF530, RF1S530SMData Sheet November 1999 File Number 1575.614A, 100V, 0.160 Ohm, N-Channel Power FeaturesMOSFETs 14A, 100VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.160power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand aspecified level of energy in th

0.30. irf530.pdf Size:235K _inchange_semiconductor

IRF530
IRF530

INCHANGE Semiconductorisc N-Channel Mosfet Transistor IRF530FEATURESLow RDS(on)V Rated at 20VGSSilicon Gate for Fast Switching SpeedRuggedLow Drive RequirementsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power suppli

0.31. irf5305.pdf Size:241K _inchange_semiconductor

IRF530
IRF530

isc P-Channel MOSFET Transistor IRF5305,IIRF5305FEATURESStatic drain-source on-resistance:RDS(on)0.06Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONCombine with the fast switching speed and ruggedized devicedesign,provide the designer with an extremely efficient andreliab

0.32. irf530n.pdf Size:245K _inchange_semiconductor

IRF530
IRF530

isc N-Channel MOSFET Transistor IRF530NIIRF530NFEATURESStatic drain-source on-resistance:RDS(on) 0.09Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

0.33. irf530nl.pdf Size:256K _inchange_semiconductor

IRF530
IRF530

Isc N-Channel MOSFET Transistor IRF530NLFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100

0.34. irf530ns.pdf Size:258K _inchange_semiconductor

IRF530
IRF530

Isc N-Channel MOSFET Transistor IRF530NSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

Datasheet: IRF520N , IRF520NS , IRF521 , IRF5210 , IRF5210L , IRF5210S , IRF522 , IRF523 , IRF640 , IRF5305 , IRF5305L , IRF5305S , IRF530A , IRF530FI , IRF530N , IRF530NL , IRF530NS .

 

 
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