IRF530 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF530

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 90 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Tensión umbral compuerta-fuente Vgs(th): 4 V

Corriente continua de drenaje (Id): 16 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 900 pF

Resistencia drenaje-fuente RDS(on): 0.16 Ohm

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de MOSFET IRF530

IRF530 Datasheet (PDF)

1.1. irf530 mot.pdf Size:173K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by IRF530/D Advance Information IRF530 TMOS E-FET.? Power Field Effect Transistor N�Channel Enhancement�Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 14 AMPERES energy in the avalanche and commutation modes. This new energy 100 VOLTS efficient design also offers a drain�to�source d

1.2. irf530.rev1.1.pdf Size:166K _motorola

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by IRF530/D Product Preview IRF530 TMOS E-FET.? Power Field Effect Transistor N�Channel Enhancement�Mode Silicon Gate TMOS POWER FET This advanced TMOS power FET is designed to withstand high 14 AMPERES energy in the avalanche and commutation modes. This new energy 100 VOLTS efficient design also offers a drain�to�source diode

1.3. irf530n 1.pdf Size:98K _philips

Philips Semiconductors Product specification N-channel TrenchMOS? transistor IRF530N FEATURES SYMBOL QUICK REFERENCE DATA � �Trench� technology d � Low on-state resistance VDSS = 100 V � Fast switching � Low thermal resistance ID = 17 A g RDS(ON) ? 110 m? s GENERAL DESCRIPTION PINNING SOT78 (TO220AB) N-channel enhancement mode PIN DESCRIPTION tab field-effect power transistor in a

1.4. irf530fp.pdf Size:77K _st

IRF530FP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID IRF530FP 100 V < 0.16 ? 10 A TYPICAL R = 0.12 ? DS(on) 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE AVALANCHE RUGGED TECHNOLOGY APPLICATION ORIENTED 3 CHARACTERIZATION 2 1 HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE TO-220FP APPLICATIONS HIGH CURRENT,

1.5. irf530.pdf Size:53K _st

IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID IRF530 100 V < 0.16 ? 16 A IRF530FI 100 V < 0.16 ? 11 A TYPICAL R = 0.12 ? DS(on) AVALANCHERUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE 3 3 HIGH CURRENT CAPABILITY 2 2 175oC OPERATING TEMPERATURE 1 1 APPLICATION ORIENTED CHARACTERIZATION T

1.6. irf530-1-2-3-fi.pdf Size:276K _st2

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1.7. irf530.pdf Size:180K _fairchild_semi

1.8. irf530a.pdf Size:254K _fairchild_semi

IRF530A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area TO-220 ? 175 C Operating Temperature �A (Max.) @ VDS = 100V Lower Leakage Current : 10 ? Lower RDS(ON) : 0.092 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolu

1.9. irf530.pdf Size:175K _international_rectifier

1.10. irf530s.pdf Size:180K _international_rectifier

1.11. irf5305.pdf Size:124K _international_rectifier

PD - 91385B IRF5305 HEXFET� Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175�C Operating Temperature Fast Switching RDS(on) = 0.06? P-Channel G Fully Avalanche Rated ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This

1.12. irf530ns.pdf Size:178K _international_rectifier

PD - 91352A IRF530NS/L HEXFET� Power MOSFET Advanced Process Technology D VDSS =100V Surface Mount (IRF530NS) Low-profile through-hole (IRF530NL) 175�C Operating Temperature RDS(on) = 0.11? G Fast Switching Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resis

1.13. irf530n.pdf Size:212K _international_rectifier

PD - 91351 IRF530N HEXFET� Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175�C Operating Temperature RDS(on) = 90m? G Fast Switching Fully Avalanche Rated ID = 17A S Description Advanced HEXFET� Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per si

1.14. irf530pbf.pdf Size:2177K _international_rectifier

PD - 94931 IRF530PbF � Lead-Free 1/8/04 Document Number: 91019 www.vishay.com 1 IRF530PbF Document Number: 91019 www.vishay.com 2 IRF530PbF Document Number: 91019 www.vishay.com 3 IRF530PbF Document Number: 91019 www.vishay.com 4 IRF530PbF Document Number: 91019 www.vishay.com 5 IRF530PbF Document Number: 91019 www.vishay.com 6 IRF530PbF TO-220AB Package Outline Dimens

1.15. irf5305s.pdf Size:171K _international_rectifier

PD - 91386C IRF5305S/L HEXFET� Power MOSFET Advanced Process Technology D Surface Mount (IRF5305S) VDSS = -55V Low-profile through-hole (IRF5305L) 175�C Operating Temperature RDS(on) = 0.06? Fast Switching G P-Channel ID = -31A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extrem

1.16. irf530spbf.pdf Size:1851K _international_rectifier

PD- 95982 IRF530SPbF � Lead-Free 12/21/04 Document Number: 91020 www.vishay.com 1 IRF530SPbF Document Number: 91020 www.vishay.com 2 IRF530SPbF Document Number: 91020 www.vishay.com 3 IRF530SPbF Document Number: 91020 www.vishay.com 4 IRF530SPbF Document Number: 91020 www.vishay.com 5 IRF530SPbF Document Number: 91020 www.vishay.com 6 IRF530SPbF Peak Diode Recovery dv/d

1.17. irf530a.pdf Size:944K _samsung

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Lower Leakage Current : 10 � A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.092 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings

1.18. irfp130-131 irf530-533.pdf Size:360K _samsung

1.19. irf530s sihf530s.pdf Size:171K _vishay

IRF530S, SiHF530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY � Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 � Surface Mount RDS(on) (?)VGS = 10 V 0.16 � Available in Tape and Reel Qg (Max.) (nC) 26 � Dynamic dV/dt Rating Qgs (nC) 5.5 � Repetitive Avalanche Rated � 175 �C Operating Temperature Qgd (nC) 11 � Fast Switching Configuration Single � Eas

1.20. irf530 sihf530.pdf Size:201K _vishay

IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY � Dynamic dV/dt Rating VDS (V) 100 Available � Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.16 RoHS* � 175 �C Operating Temperature Qg (Max.) (nC) 26 COMPLIANT � Fast Switching Qgs (nC) 5.5 � Ease of Paralleling Qgd (nC) 11 � Simple Drive Requirements Configuration Single � Compliant to RoHS Directive

1.21. irf530 rf1s530sm.pdf Size:74K _intersil

IRF530, RF1S530SM Data Sheet November 1999 File Number 1575.6 14A, 100V, 0.160 Ohm, N-Channel Power Features MOSFETs • 14A, 100V These are N-Channel enhancement mode silicon gate • rDS(ON) = 0.160Ω power field effect transistors. They are advanced power • Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in th

Otros transistores... IRF520N , IRF520NS , IRF521 , IRF5210 , IRF5210L , IRF5210S , IRF522 , IRF523 , IRF640 , IRF5305 , IRF5305L , IRF5305S , IRF530A , IRF530FI , IRF530N , IRF530NL , IRF530NS .

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