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IRF530 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF530

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 90 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 16 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 26 nC

Conductancia de drenaje-sustrato (Cd): 900 pF

Resistencia drenaje-fuente RDS(on): 0.16 Ohm

Empaquetado / Estuche: TO220

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IRF530 Datasheet (PDF)

1.1. irf530 mot.pdf Size:173K _motorola

IRF530
IRF530

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by IRF530/D Advance Information IRF530 TMOS E-FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER

1.2. irf530.rev1.1.pdf Size:166K _motorola

IRF530
IRF530

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by IRF530/D Product Preview IRF530 TMOS E-FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS POWER FET

 1.3. irf530n 1.pdf Size:98K _philips

IRF530
IRF530

Philips Semiconductors Product specification N-channel TrenchMOS transistor IRF530N FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d • Low on-state resistance VDSS = 100 V • Fast switching • Low thermal resistance ID = 17 A g RDS(ON) ≤ 110 mΩ s GENERAL DESCRIPTION PINNING SOT78 (TO220AB) N-channel enhancement mode PIN DESCRIPTION tab field-effect po

1.4. irf530.pdf Size:53K _st

IRF530
IRF530

IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID IRF530 100 V < 0.16 Ω 16 A IRF530FI 100 V < 0.16 Ω 11 A TYPICAL R = 0.12 Ω DS(on) AVALANCHERUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE 3 3 HIGH CURRENT CAPABILITY 2 2 175oC OPERATING TEMPERATURE 1 1 APPLICATION ORIENTED CHARACTERI

 1.5. irf530 irf531 irf532 irf533-fi.pdf Size:276K _st

IRF530
IRF530



1.6. irf530fp.pdf Size:77K _st

IRF530
IRF530

IRF530FP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID IRF530FP 100 V < 0.16 Ω 10 A TYPICAL R = 0.12 Ω DS(on) 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE AVALANCHE RUGGED TECHNOLOGY APPLICATION ORIENTED 3 CHARACTERIZATION 2 1 HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE TO-220FP APPLICATIONS HIGH CU

1.7. irf530.pdf Size:180K _fairchild_semi

IRF530
IRF530



1.8. irf530a.pdf Size:254K _fairchild_semi

IRF530
IRF530

IRF530A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology Ω RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area TO-220 Ο 175 C Operating Temperature µA (Max.) @ VDS = 100V Lower Leakage Current : 10 Ω Lower RDS(ON) : 0.092 (Typ.) 1 2 3 1.Gate 2. Drain 3. Sourc

1.9. irf530.pdf Size:175K _international_rectifier

IRF530
IRF530



1.10. irf5305.pdf Size:124K _international_rectifier

IRF530
IRF530

PD - 91385B IRF5305 HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175°C Operating Temperature Fast Switching RDS(on) = 0.06Ω P-Channel G Fully Avalanche Rated ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area

1.11. irf530n.pdf Size:212K _international_rectifier

IRF530
IRF530

PD - 91351 IRF530N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 90mΩ G Fast Switching Fully Avalanche Rated ID = 17A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc

1.12. irf530s.pdf Size:197K _international_rectifier

IRF530
IRF530

IRF530S, SiHF530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 • Surface Mount RDS(on) ()VGS = 10 V 0.16 • Available in Tape and Reel Qg (Max.) (nC) 26 • Dynamic dV/dt Rating Qgs (nC) 5.5 • Repetitive Avalanche Rated • 175 °C Operating Temperature Qgd (nC) 11 • Fast Switching Configu

1.13. irf530npbf.pdf Size:183K _international_rectifier

IRF530
IRF530

PD - 94962 IRF530NPbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 100V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 90mΩ l Fast Switching G l Fully Avalanche Rated ID = 17A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremel

1.14. irf530nspbf.pdf Size:279K _international_rectifier

IRF530
IRF530

PD - 95100 IRF530NSPbF IRF530NLPbF HEXFET Power MOSFET l Advanced Process Technology D VDSS = 100V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 90mΩ G l Fast Switching l Fully Avalanche Rated ID = 17A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achi

1.15. irf530ns.pdf Size:178K _international_rectifier

IRF530
IRF530

PD - 91352A IRF530NS/L HEXFET® Power MOSFET Advanced Process Technology D VDSS =100V Surface Mount (IRF530NS) Low-profile through-hole (IRF530NL) 175°C Operating Temperature RDS(on) = 0.11Ω G Fast Switching Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low o

1.16. irf530spbf.pdf Size:1851K _international_rectifier

IRF530
IRF530

PD- 95982 IRF530SPbF • Lead-Free 12/21/04 Document Number: 91020 www.vishay.com 1 IRF530SPbF Document Number: 91020 www.vishay.com 2 IRF530SPbF Document Number: 91020 www.vishay.com 3 IRF530SPbF Document Number: 91020 www.vishay.com 4 IRF530SPbF Document Number: 91020 www.vishay.com 5 IRF530SPbF Document Number: 91020 www.vishay.com 6 IRF530SPbF Peak Diode Recovery

1.17. irf5305pbf.pdf Size:182K _international_rectifier

IRF530
IRF530

PD - 94788 IRF5305PbF HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -55V 175°C Operating Temperature Fast Switching RDS(on) = 0.06Ω P-Channel G Fully Avalanche Rated ID = -31A Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance pe

1.18. irf5305s.pdf Size:171K _international_rectifier

IRF530
IRF530

PD - 91386C IRF5305S/L HEXFET® Power MOSFET Advanced Process Technology D Surface Mount (IRF5305S) VDSS = -55V Low-profile through-hole (IRF5305L) 175°C Operating Temperature RDS(on) = 0.06Ω Fast Switching G P-Channel ID = -31A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve

1.19. irf5305lpbf irf5305spbf.pdf Size:700K _international_rectifier

IRF530
IRF530

PD - 95957 IRF5305S/LPbF • Lead-Free www.irf.com 1 4/21/05 IRF5305S/LPbF 2 www.irf.com IRF5305S/LPbF www.irf.com 3 IRF5305S/LPbF 4 www.irf.com IRF5305S/LPbF www.irf.com 5 IRF5305S/LPbF 6 www.irf.com IRF5305S/LPbF www.irf.com 7 IRF5305S/LPbF D2Pak Package Outline D2Pak Part Marking Information T HIS IS AN IRF530S WIT H PART NUMBER LOT CODE 8024 INTERNATIONAL ASSE

1.20. irf530pbf.pdf Size:2177K _international_rectifier

IRF530
IRF530

PD - 94931 IRF530PbF • Lead-Free 1/8/04 Document Number: 91019 www.vishay.com 1 IRF530PbF Document Number: 91019 www.vishay.com 2 IRF530PbF Document Number: 91019 www.vishay.com 3 IRF530PbF Document Number: 91019 www.vishay.com 4 IRF530PbF Document Number: 91019 www.vishay.com 5 IRF530PbF Document Number: 91019 www.vishay.com 6 IRF530PbF TO-220AB Package Outline D

1.21. irfp130-131 irf530-533.pdf Size:360K _samsung

IRF530
IRF530



1.22. irf530a.pdf Size:944K _samsung

IRF530
IRF530

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology Ω RDS(on) = 0.11 Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area Ο 175 Operating Temperature Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V Ω Lower RDS(ON) : 0.092 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum

1.23. irf530s sihf530s.pdf Size:171K _vishay

IRF530
IRF530

IRF530S, SiHF530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) 100 • Surface Mount RDS(on) ()VGS = 10 V 0.16 • Available in Tape and Reel Qg (Max.) (nC) 26 • Dynamic dV/dt Rating Qgs (nC) 5.5 • Repetitive Avalanche Rated • 175 °C Operating Temperature Qgd (nC) 11 • Fast Switching Configu

1.24. irf530 sihf530.pdf Size:201K _vishay

IRF530
IRF530

IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 100 Available • Repetitive Avalanche Rated RDS(on) ()VGS = 10 V 0.16 RoHS* • 175 °C Operating Temperature Qg (Max.) (nC) 26 COMPLIANT • Fast Switching Qgs (nC) 5.5 • Ease of Paralleling Qgd (nC) 11 • Simple Drive Requirements Configuration Single • Complian

1.25. irf530 rf1s530sm.pdf Size:74K _intersil

IRF530
IRF530

IRF530, RF1S530SM Data Sheet November 1999 File Number 1575.6 14A, 100V, 0.160 Ohm, N-Channel Power Features MOSFETs • 14A, 100V These are N-Channel enhancement mode silicon gate • rDS(ON) = 0.160Ω power field effect transistors. They are advanced power • Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in th

Otros transistores... IRF520N , IRF520NS , IRF521 , IRF5210 , IRF5210L , IRF5210S , IRF522 , IRF523 , IRF640 , IRF5305 , IRF5305L , IRF5305S , IRF530A , IRF530FI , IRF530N , IRF530NL , IRF530NS .

 

 
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