NCE048N30Q MOSFET Datasheet: N-Ch, 30V, 45A. Full specification with pinout and replacement list

NCE048N30Q Specs and Replacement

Type Designator: NCE048N30Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: PDFN3.3X3.3-8L

NCE048N30Q substitution

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NCE048N30Q datasheet

..1. Size:810K ncepower
nce048n30q.pdf pdf_icon

http //www.ncepower.com NCE048N30Q NCE N-Channel Enhancement Mode Power MOSFET Description General Features The NCE048N30Q uses advanced trench technology and V =30V,I =45A DS D design to provide excellent R with low gate charge. It DS(ON) R =4.2m @ V =10V DS(ON) GS can be used in a wide variety of applications. R =7.3m @ V =4.5V DS(ON) GS Application High density ce... See More ⇒

9.1. Size:776K ncepower
nce042n30k.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE042N30K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE042N30K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =30V,I =100A DS D R =3.2m @ V =10V Schematic diagram DS(ON) GS R =6.8m @ V =4.5V DS(ON) ... See More ⇒

Detailed specifications: IRFD24N, NCE01ND03S, NCE020N30K, NCE025N30G, NCE025N30K, NCE035N30G, NCE035N30K, NCE042N30K, SKD502T, NCE1220SP, NCE1227SP, NCE1230SP, NCE18ND11U, NCE2004NE, NCE2006NE, NCE2007NS, NCE2008E