All MOSFET. NCE048N30Q Datasheet

 

NCE048N30Q Datasheet and Replacement


   Type Designator: NCE048N30Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: PDFN3.3X3.3-8L
 

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NCE048N30Q Datasheet (PDF)

 ..1. Size:810K  ncepower
 nce048n30q.pdf pdf_icon

NCE048N30Q

http://www.ncepower.comNCE048N30QNCE N-Channel Enhancement Mode Power MOSFETDescriptionGeneral FeaturesThe NCE048N30Q uses advanced trench technology and V =30V,I =45ADS Ddesign to provide excellent R with low gate charge. ItDS(ON)R =4.2m @ V =10VDS(ON) GScan be used in a wide variety of applications.R =7.3m @ V =4.5VDS(ON) GSApplication High density ce

 9.1. Size:776K  ncepower
 nce042n30k.pdf pdf_icon

NCE048N30Q

Pb Free Producthttp://www.ncepower.comNCE042N30KNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE042N30K uses advanced trench technology anddesign to provide excellent R with low gate charge. ItDS(ON)can be used in a wide variety of applications.General Features V =30V,I =100ADS DR =3.2m @ V =10V Schematic diagramDS(ON) GSR =6.8m @ V =4.5VDS(ON)

Datasheet: IRFD24N , NCE01ND03S , NCE020N30K , NCE025N30G , NCE025N30K , NCE035N30G , NCE035N30K , NCE042N30K , SKD502T , NCE1220SP , NCE1227SP , NCE1230SP , NCE18ND11U , NCE2004NE , NCE2006NE , NCE2007NS , NCE2008E .

History: CRST055N08N

Keywords - NCE048N30Q MOSFET datasheet

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