BLM08P02-E - параметры транзистора MOSFET, его аналоги, datasheet

BLM08P02-E Datasheet (PDF)

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Green Product BLM08P02 30V P-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM08P02 uses advanced trench technology to provide V = -20V,I = -40A (PDFN3.3*3.3) DS Dexcellent R , low gate charge. It can be used in a wide DS(ON) I = -25A (SOP8) Dvariety of applications. R

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Green Product BLM08N10 100V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM08N10 uses advanced trench technology to provide V = 100V,I = 110A DS Dexcellent R , low gate charge. It can be used in a wide R

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blm08n06-p blm08n06-d blm08n06-e.pdf pdf_icon

Green Product BLM08N06 60V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM08N06 uses advanced trench technology to provide V = 60V,I = 80A DS Dexcellent R , low gate charge. It can be used in a wide R

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blm08n68-p.pdf pdf_icon

Green Product BLM08N68 68V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM08N68 uses advanced trench technology to provide V = 68V,I = 90A DS Dexcellent R , low gate charge. It can be used in a wide R

Другие MOSFET... BLM07N06-P , BLM07N20-C , BLM08N06-D , BLM08N06-E , BLM08N06-P , BLM08N10-B , BLM08N10-P , BLM08N68-P , 2N7002 , BLM08P02-R , BLM10P03-D , BLM10P03-E , BLM10P03-Q , BLM10P03-R , BLM12N08-B , BLM12N08-D , BLM12N08-P .