DACMI450N120BZK3
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: DACMI450N120BZK3
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1360
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1200
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 450
A
Tjⓘ - Максимальная температура канала: 175
°C
Qgⓘ -
Общий заряд затвора: 609
nC
trⓘ -
Время нарастания: 76
ns
Cossⓘ - Выходная емкость: 642
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.005(typ)
Ohm
Тип корпуса:
SOT227
Аналог (замена) для DACMI450N120BZK3
DACMI450N120BZK3
Datasheet (PDF)
0.1. Size:385K dacosemi
dacmi450n120bzk3.pdf 
DACMI450N120BZK3Silicon Carbide Enhancement Mode MOSFETPreliminarySOT-227FeaturesKSG VDSS = 1200VD RDS(ON) Typ. 5 m@ VGS = 15V Fully Avalanche Rated SDG Pb Free & RoHS Compliant KS(Kelvin Source) Isolation Type PackageS Dimensions in inches and (millimeters) Electrically Isolation base plateApplications Solar Inverters Sw
9.1. Size:457K dacosemi
dacmi060n120bzk.pdf 
DACMI060N120BZKSilicon Carbide Enhancement Mode MOSFETSOT-227PreliminaryFeaturesKSG VDSS = 1200VD RDS(ON) Tpy. 40 m@ V GS = 20 V Fully Avalanche Rated SG D Pb Free & RoHS Compliant KS(Kelvin Source) Isolation Type PackageS Electrically Isolation base plateDimensions in inches and (millimeters)Applications Solar Inverters
9.2. Size:1581K dacosemi
dacmi150n120bzk3.pdf 
DACMI150N120BZK3Silicon Carbide Enhancement Mode MOSFETPreliminarySOT-227FeaturesKSG VDSS = 1200VD RDS(ON) Tpy. 14 m@ VGS = 15V Fully Avalanche Rated SG D Pb Free & RoHS Compliant KS(Kelvin Source) Isolation Type PackageS Electrically Isolation base plateDimensions in inches and (millimeters)Applications Solar Inverters S
9.3. Size:396K dacosemi
dacmi180n120bzk.pdf 
DACMI180N120BZKSilicon Carbide Enhancement Mode MOSFETPreliminarySOT-227FeaturesKSG VDSS = 1200VD RDS(ON) Tpy.16 m@ VGS = 18V Fully Avalanche Rated SG D Pb Free & RoHS Compliant KS(Kelvin Source) Isolation Type PackageS Electrically Isolation base plateDimensions in inches and (millimeters)Applications Solar Inverters Swi
9.4. Size:400K dacosemi
dacmi240n120bzk.pdf 
DACMI240N120BZKSilicon Carbide Enhancement Mode MOSFETPreliminarySOT-227FeaturesKSG VDSS = 1200VD RDS(ON) Tpy.10 m@ VGS = 18V Fully Avalanche Rated SG D Pb Free & RoHS Compliant KS(Kelvin Source) Isolation Type PackageS Electrically Isolation base plateDimensions in inches and (millimeters)Applications Solar Inverters Swi
9.5. Size:782K dacosemi
dacmi120n120bzk.pdf 
DACMI120N120BZKSilicon Carbide Enhancement Mode MOSFETSOT-227FeaturesKSG VDSS = 1200VD RDS(ON)
9.6. Size:386K dacosemi
dacmi250n120bzk3.pdf 
DACMI250N120BZK3Silicon Carbide Enhancement Mode MOSFETPreliminarySOT-227FeaturesKSG VDSS = 1200VD RDS(ON) Tpy.13 m@ V = 15 VGS Fully Avalanche Rated SG D Pb Free & RoHS Compliant KS(Kelvin Source) Isolation Type PackageS Electrically Isolation base plateDimensions in inches and (millimeters)Applications Solar Inverters
9.7. Size:383K dacosemi
dacmi060n170bzk.pdf 
DACMI060N170BZKDACO SEMICONDUCTOR CO., LTD. Silicon Carbide Enhancement Mode MOSFET FeaturesSG SD Appl
Другие MOSFET... IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
