FCA20N60. Аналоги и основные параметры
Наименование производителя: FCA20N60
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 208 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm
Тип корпуса: TO3PN
Аналог (замена) для FCA20N60
- подборⓘ MOSFET транзистора по параметрам
FCA20N60 даташит
fch20n60 fca20n60 fca20n60 f109.pdf
December 2008 TM SuperFET FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15 balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate cha
fca20n60 fca20n60 f109.pdf
August 2014 FCA20N60 N-Channel SuperFET MOSFET 600 V, 20 A, 190 m Features Description SuperFET MOSFET is Fairchild Semiconductor s first genera- 650V @ TJ = 150 C tion of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 150 m utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Qg = 75 nC ) resistance an
fca20n60.pdf
FCA20N60 N-Channel SuperFET MOSFET 600 V, 20 A, 190 m Description SuperFET MOSFET is ON Semiconductor s first genera-tion Features of high voltage super-junction (SJ) MOSFET family that is 650V @ TJ = 150 C utilizing charge balance technology for outstanding low on- resistance and lower gate charge performance. This technology Typ. RDS(on) = 150 m is tailored to
fca20n60f fca20n60fs.pdf
December 2008 TM SuperFET FCA20N60F 600V N-CHANNEL FRFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15 balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 160ns ) lower gate charge performance. This a
Другие IGBT... FQP6N40CF, FQU2N50B, FQP6N80C, FQD4P25TMWS, FQP6N90C, FQP70N10, FCP20N60, FQP7N80C, IRF730, FQP7P06, FQP85N06, FQP8N80C, FCPF11N60T, FQP8N90C, FQP8P10, FQP9N30, FQP9N90C
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10 | AUD069N10A | AUD062N08BG | AUD060N08AG | AUD060N055 | AUD056N08BGL | AUB062N08BG
Popular searches
mj50ac100 | 2sc1318 replacement | 2n3905 | mj15023 | tip36c transistor | 2sc3320 | 2sc2078 | ac127 transistor





