All MOSFET. FCA20N60 Datasheet

 

FCA20N60 MOSFET. Datasheet pdf. Equivalent

Type Designator: FCA20N60

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 208 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 75 nC

Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm

Package: TO3PN

FCA20N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCA20N60 Datasheet (PDF)

1.1. fca20n60fs.pdf Size:952K _upd-mosfet

FCA20N60
FCA20N60

December 2008 TM SuperFET FCA20N60F 600V N-CHANNEL FRFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.15Ω balance mechanism for outstanding low on-resistance and • Fast Recovery Type ( trr = 160ns ) lower gate charge performance. This a

1.2. fca20n60s fca20n60s f109.pdf Size:750K _upd-mosfet

FCA20N60
FCA20N60

August 2007 TM SuperFET FCA20N60S / FCA20N60S_F109 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.22Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg=55nC) lower gate charge perform

 1.3. fca20n60f.pdf Size:952K _fairchild_semi

FCA20N60
FCA20N60

December 2008 TM SuperFET FCA20N60F 600V N-CHANNEL FRFET Features Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15? balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 160ns ) lower gate charge performance. This advanced techn

1.4. fch20n60 fca20n60 fca20n60 f109.pdf Size:971K _fairchild_semi

FCA20N60
FCA20N60

December 2008 TM SuperFET FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET Features Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15? balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate charge performanc

 1.5. fca20n60.pdf Size:481K _fairchild_semi

FCA20N60
FCA20N60

August 2014 FCA20N60 N-Channel SuperFET® MOSFET 600 V, 20 A, 190 mΩ Features Description SuperFET® MOSFET is Fairchild Semiconductor’s first genera- • 650V @ TJ = 150°C tion of high voltage super-junction (SJ) MOSFET family that is • Typ. RDS(on) = 150 mΩ utilizing charge balance technology for outstanding low on- • Ultra Low Gate Charge (Typ. Qg = 75 nC ) resistance an

1.6. fca20n60 f109.pdf Size:481K _fairchild_semi

FCA20N60
FCA20N60

August 2014 FCA20N60 N-Channel SuperFET® MOSFET 600 V, 20 A, 190 mΩ Features Description SuperFET® MOSFET is Fairchild Semiconductor’s first genera- • 650V @ TJ = 150°C tion of high voltage super-junction (SJ) MOSFET family that is • Typ. RDS(on) = 150 mΩ utilizing charge balance technology for outstanding low on- • Ultra Low Gate Charge (Typ. Qg = 75 nC ) resistance an

Datasheet: FQP6N40CF , FQU2N50B , FQP6N80C , FQD4P25TM_WS , FQP6N90C , FQP70N10 , FCP20N60 , FQP7N80C , APT50M38JFLL , FQP7P06 , FQP85N06 , FQP8N80C , FCPF11N60T , FQP8N90C , FQP8P10 , FQP9N30 , FQP9N90C .

 

 
Back to Top