Справочник MOSFET. AONS62920

 

AONS62920 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AONS62920
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 113.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 48 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 345 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0063 Ohm
   Тип корпуса: DFN5X6-8L

 Аналог (замена) для AONS62920

 

 

AONS62920 Datasheet (PDF)

 ..1. Size:352K  aosemi
 aons62920.pdf

AONS62920 AONS62920

AONS62920TM100V Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 48A Low RDS(ON) Logic Driven RDS(ON) (at VGS=10V)

 6.1. Size:336K  1
 aons62922.pdf

AONS62920 AONS62920

AONS62922TM120V N-Channel AlphaSGTGeneral Description Product SummaryVDS120V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic level Gate Drive RDS(ON) (at VGS=10V)

 6.2. Size:336K  aosemi
 aons62922.pdf

AONS62920 AONS62920

AONS62922TM120V N-Channel AlphaSGTGeneral Description Product SummaryVDS120V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic level Gate Drive RDS(ON) (at VGS=10V)

 8.1. Size:364K  aosemi
 aons62606.pdf

AONS62920 AONS62920

AONS6260660V N-Channel MOSFETGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 195A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 8.2. Size:329K  aosemi
 aons62618.pdf

AONS62920 AONS62920

AONS62618TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 44A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

 8.3. Size:337K  aosemi
 aons62602.pdf

AONS62920 AONS62920

AONS62602TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 85A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

 8.4. Size:362K  aosemi
 aons62614t.pdf

AONS62920 AONS62920

AONS62614TTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 170A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

 8.5. Size:335K  aosemi
 aons62614.pdf

AONS62920 AONS62920

AONS62614TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 100A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

 8.6. Size:493K  aosemi
 aons62530.pdf

AONS62920 AONS62920

AONS62530TM150V N-Channel MOSGeneral Description Product SummaryVDS150V Latest Trench Power MOS (MOS MV) technology Low Gate Charge ID (at VGS=10V) 19A Optimized for fast-switching applications RDS(ON) (at VGS=10V)

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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