FXN8N65F - параметры транзистора MOSFET, его аналоги, datasheet

FXN8N65F Datasheet (PDF)

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1 FuXin Semiconductor Co., Ltd. Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 650 - - V Gate Threshold Voltage VGS(th) 2.0 3.0 4.0 VDS = VGS, ID = 250A Drain Cut-Off Current IDSS VDS = 650V, VGS = 0V - - 1 A Ga

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FuXin Semiconductor Co., Ltd. FXN8N65D Series Rev.A General Description Features The FXN8N65D uses advanced Silicon s MOSFET Technology, which VDS = 650V provides high performance in on-state resistance, fast switching ID = 8A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

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FuXin Semiconductor Co., Ltd.FXN8N60F Series Rev.AGeneral Description FeaturesThe FXN8N60F uses advanced Silicon s MOSFET Technology, whichV = 600VDSprovides high performance in on-state resistance, fast switchingID = 8A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial appl

Другие MOSFET... FXN0707CN , FXN4613F , FXN4615F , FXN4620F , FXN4625F , FXN7N65F , FXN8N60F , FXN8N65D , HY1906P , FXN10N06D , FXN10N50F , FXN10N65F , FXN10N80F , FXN5N65D , FXN5N65F , FXN5N65FM , FXN65S55T .