FXN0204CQ datasheet, аналоги, основные параметры

Наименование производителя: FXN0204CQ  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 300 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 280 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 85 ns

Cossⓘ - Выходная емкость: 1100 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0026 Ohm

Тип корпуса: TO220

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Аналог (замена) для FXN0204CQ

- подборⓘ MOSFET транзистора по параметрам

 

FXN0204CQ даташит

 ..1. Size:657K  cn fx-semi
 fxn0204cq.pdf pdf_icon

FXN0204CQ

FuXin Semiconductor Co., Ltd. FXN0204CQ Serise Rev.A General Description Features The FXN0204CQ uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 280A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in indus

 6.1. Size:1086K  cn fx-semi
 fxn0204c.pdf pdf_icon

FXN0204CQ

FuXin Semiconductor Co., Ltd. FXN0204C Series Rev.A General Description Features The FXN0204C uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 280A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

 8.1. Size:807K  cn fx-semi
 fxn0205c.pdf pdf_icon

FXN0204CQ

FuXin Semiconductor Co., Ltd. FXN0205C Series Rev.A General Description Features The FXN0205C uses advanced Silicon s MOSFET Technology, which VDS = 50V provides high performance in on-state resistance, fast switching ID = 280A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

 8.2. Size:781K  cn fx-semi
 fxn0206c.pdf pdf_icon

FXN0204CQ

FuXin Semiconductor Co., Ltd. FXN0206C Series Rev.A General Description Features The FXN0206C uses advanced Silicon s MOSFET Technology, which VDS = 65V provides high performance in on-state resistance, fast switching ID = 190A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

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Другие IGBT... FXN30N50T, FXN9N40C, FXN4N60D, FXN4N65D, FXN7N65D, CRJQ99N65G2, LSD07N80A-VB, FXN0204C, 20N50, FXN100S55T, FXN9N20C, 630, 110N04, 13N90, 14N65, 18N50D, D2N60