FXN0204CQ MOSFET Datasheet: N-Ch, 40V, 280A. Full specification with pinout and replacement list

FXN0204CQ Specs and Replacement

Type Designator: FXN0204CQ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 280 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 85 nS

Cossⓘ - Output Capacitance: 1100 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm

Package: TO220

FXN0204CQ substitution

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FXN0204CQ datasheet

..1. Size:657K cn fx-semi
fxn0204cq.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN0204CQ Serise Rev.A General Description Features The FXN0204CQ uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 280A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in indus... See More ⇒

6.1. Size:1086K cn fx-semi
fxn0204c.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN0204C Series Rev.A General Description Features The FXN0204C uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 280A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri... See More ⇒

8.1. Size:807K cn fx-semi
fxn0205c.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN0205C Series Rev.A General Description Features The FXN0205C uses advanced Silicon s MOSFET Technology, which VDS = 50V provides high performance in on-state resistance, fast switching ID = 280A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri... See More ⇒

8.2. Size:781K cn fx-semi
fxn0206c.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN0206C Series Rev.A General Description Features The FXN0206C uses advanced Silicon s MOSFET Technology, which VDS = 65V provides high performance in on-state resistance, fast switching ID = 190A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria... See More ⇒

Detailed specifications: FXN30N50T , FXN9N40C , FXN4N60D , FXN4N65D , FXN7N65D , CRJQ99N65G2 , LSD07N80A-VB , FXN0204C , 5N65 , FXN100S55T , FXN9N20C , 630 , 110N04 , 13N90 , 14N65 , 18N50D , D2N60 .