DH065N04 - аналоги, параметры транзистора - Справочник транзисторов

DH065N04 технические параметры

..1. Size:1185K cn wxdh
dh065n04 dh065n04f dh065n04i dh065n04e dh065n04b dh065n04d.pdf pdf_icon

DH065N04/DH065N04FDH065N04I/ DH065N04E/DH065N04B/DH065N04D 80A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 6.0m DS(on) (TYP) standard. 1 3 S I = 80A D 2 Features Low on resist

0.1. Size:677K cn wxdh
dh065n04p.pdf pdf_icon

DH065N04P 60A 40V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 6.3m DS(on) (TYP) standard. 1 3 S I = 60A D 2 Features Low on resistance Low gate charge Fast switching L

7.1. Size:1036K cn wxdh
dh065n06 dh065n06e.pdf pdf_icon

DH065N06/DH065N06E 120A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used V = 60V DSS 2 D advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 5.2m TO-220 DS(on) (TYP) standard. G 1 R = 5m TO-263 DS(on) (TYP) 3 S 2 Features I = 120A D Low

7.2. Size:855K cn wxdh
dh065n06d.pdf pdf_icon

DH065N06D 110A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used V = 60V 2 D DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 5m DS(on) (TYP) standard. G 1 I = 110A D 3 S 2 Features Low on resistance Low gate charge Fast switching L

Другие MOSFET... DHFSJ17N65 , DHFSJ5N65 , DH060N08 , DH060N08B , DH060N08D , DH060N08E , DH060N08F , DH060N08I , P55NF06 , DH065N04B , DH065N04D , DH065N04E , DH065N04F , DH065N04I , DH065N04P , DH065N06 , DH065N06D .