DH065N04 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: DH065N04
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 70 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 85 ns
Cossⓘ - Выходная емкость: 178 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0072 Ohm
Тип корпуса: TO220
Аналог (замена) для DH065N04
DH065N04 Datasheet (PDF)
dh065n04 dh065n04f dh065n04i dh065n04e dh065n04b dh065n04d.pdf

DH065N04/DH065N04FDH065N04I/DH065N04E/DH065N04B/DH065N04D80A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 6.0mDS(on) (TYP)standard.13 SI = 80AD2 Features Low on resist
dh065n04p.pdf

DH065N04P60A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 6.3mDS(on) (TYP)standard.13 SI = 60AD2 Features Low on resistance Low gate charge Fast switching L
dh065n06 dh065n06e.pdf

DH065N06/DH065N06E120A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedV = 60VDSS2 Dadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 5.2mTO-220DS(on) (TYP)standard. G1R = 5mTO-263DS(on) (TYP)3 S2 FeaturesI = 120AD Low
dh065n06d.pdf

DH065N06D110A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedV = 60V2 D DSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 5mDS(on) (TYP)standard. G1I = 110AD3 S2 Features Low on resistance Low gate charge Fast switching L
Другие MOSFET... DHFSJ17N65 , DHFSJ5N65 , DH060N08 , DH060N08B , DH060N08D , DH060N08E , DH060N08F , DH060N08I , IRFB4115 , DH065N04B , DH065N04D , DH065N04E , DH065N04F , DH065N04I , DH065N04P , DH065N06 , DH065N06D .
History: IRF7607PBF | STP80N10F7 | NVMFS015N10MCL | BSO203P | ZVN4424Z | 2SK2906-01 | VBZE2810
History: IRF7607PBF | STP80N10F7 | NVMFS015N10MCL | BSO203P | ZVN4424Z | 2SK2906-01 | VBZE2810



Список транзисторов
Обновления
MOSFET: JMSL1010PU | JMSL1010PP | JMSL1010PKS | JMSL1010PK | JMSL1010PGS | JMSL1010PGQ | JMSL1010PGD | JMSL1010PG | JMSL1010PE | JMSL1010PC | JMSL1010AUQ | JMSL1010AU | JMSL1010AP | JMSL1010AKQ | JMSL1010AK | JMSL1010AGQ
Popular searches
j377 transistor datasheet | svt20240nt | tip41c replacement | b772m transistor | mj15003g datasheet | irfp460n datasheet | mj15025g | ksa1381 replacement