DH065N04 Datasheet. Specs and Replacement

Type Designator: DH065N04  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 85 nS

Cossⓘ - Output Capacitance: 178 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm

Package: TO220

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DH065N04 datasheet

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 dh065n04 dh065n04f dh065n04i dh065n04e dh065n04b dh065n04d.pdf pdf_icon

DH065N04

DH065N04/DH065N04FDH065N04I/ DH065N04E/DH065N04B/DH065N04D 80A 40V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 6.0m DS(on) (TYP) standard. 1 3 S I = 80A D 2 Features Low on resist... See More ⇒

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 dh065n04p.pdf pdf_icon

DH065N04

DH065N04P 60A 40V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D V = 40V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 6.3m DS(on) (TYP) standard. 1 3 S I = 60A D 2 Features Low on resistance Low gate charge Fast switching L... See More ⇒

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 dh065n06 dh065n06e.pdf pdf_icon

DH065N04

DH065N06/DH065N06E 120A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used V = 60V DSS 2 D advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 5.2m TO-220 DS(on) (TYP) standard. G 1 R = 5m TO-263 DS(on) (TYP) 3 S 2 Features I = 120A D Low... See More ⇒

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DH065N04

DH065N06D 110A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used V = 60V 2 D DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 5m DS(on) (TYP) standard. G 1 I = 110A D 3 S 2 Features Low on resistance Low gate charge Fast switching L... See More ⇒

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Detailed specifications: DHFSJ17N65, DHFSJ5N65, DH060N08, DH060N08B, DH060N08D, DH060N08E, DH060N08F, DH060N08I, AO3400, DH065N04B, DH065N04D, DH065N04E, DH065N04F, DH065N04I, DH065N04P, DH065N06, DH065N06D

Keywords - DH065N04 MOSFET specs

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