FQU3N50C. Аналоги и основные параметры

Наименование производителя: FQU3N50C

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 35 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 2.5 Ohm

Тип корпуса: TO251 IPAK

Аналог (замена) для FQU3N50C

- подборⓘ MOSFET транзистора по параметрам

 

FQU3N50C даташит

 ..1. Size:927K  fairchild semi
 fqd3n50c fqu3n50c.pdf pdf_icon

FQU3N50C

March 2008 QFET FQD3N50C / FQU3N50C 500V N-Channel MOSFET Features Description 2.5A, 500V, RDS(on) = 2.5 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 10 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 8.5pF) This advanced technology has been especially tai

 9.1. Size:773K  fairchild semi
 fqu3n60ctu.pdf pdf_icon

FQU3N50C

August 2006 QFET FQD3N60C / FQU3N60C 600V N-Channel MOSFET Features Description 2.4A, 600V, RDS(on) = 3.4 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 10.5nC) DMOS technology. Low Crss ( typical 5pF) This advanced technology has been especially t

 9.2. Size:575K  fairchild semi
 fqd3n60 fqu3n60.pdf pdf_icon

FQU3N50C

April 2000 TM QFET QFET QFET QFET FQD3N60 / FQU3N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.4A, 600V, RDS(on) = 3.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology h

 9.3. Size:705K  fairchild semi
 fqu3n40tu.pdf pdf_icon

FQU3N50C

April 2000 TM QFET QFET QFET QFET FQD3N40 / FQU3N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.0A, 400V, RDS(on) = 3.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.2 pF) This advanced technolog

ПОКАЗАТЬ ЕЩЁ

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