All MOSFET. FQU3N50C Datasheet

 

FQU3N50C MOSFET. Datasheet pdf. Equivalent

Type Designator: FQU3N50C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 35 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 2.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 10 nC

Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm

Package: TO251_IPAK

FQU3N50C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQU3N50C Datasheet (PDF)

1.1. fqd3n50c fqu3n50c.pdf Size:927K _fairchild_semi

FQU3N50C
FQU3N50C

March 2008 ® QFET FQD3N50C / FQU3N50C 500V N-Channel MOSFET Features Description • 2.5A, 500V, RDS(on) = 2.5? @VGS = 10 V These N-Channel enhancement mode power field effect • Low gate charge ( typical 10 nC) transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Crss ( typical 8.5pF) This advanced technology has been especially tailored to • F

5.1. fqd3n60 fqu3n60.pdf Size:575K _fairchild_semi

FQU3N50C
FQU3N50C

April 2000 TM QFET QFET QFET QFET FQD3N60 / FQU3N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.4A, 600V, RDS(on) = 3.6? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technology has been espec

5.2. fqu3n60ctu.pdf Size:773K _fairchild_semi

FQU3N50C
FQU3N50C

August 2006 ® QFET FQD3N60C / FQU3N60C 600V N-Channel MOSFET Features Description • 2.4A, 600V, RDS(on) = 3.4 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( typical 10.5nC) DMOS technology. • Low Crss ( typical 5pF) This advanced technology has been especially t

 5.3. fqu3n40tu.pdf Size:705K _fairchild_semi

FQU3N50C
FQU3N50C

April 2000 TM QFET QFET QFET QFET FQD3N40 / FQU3N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.0A, 400V, RDS(on) = 3.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.2 pF) This advanced technolog

5.4. fqu3n60 fqu3n60tu.pdf Size:573K _fairchild_semi

FQU3N50C
FQU3N50C

April 2000 TM QFET QFET QFET QFET FQD3N60 / FQU3N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.4A, 600V, RDS(on) = 3.6Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 10 nC) planar stripe, DMOS technology. • Low Crss ( typical 5.5 pF) This advanced technology h

Datasheet: FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 , FQU2N90TU_AM002 , IRF520 , FQU4N50TU_WS , FQU5N40 , FDMC7582 , FQU5N60C , FDMQ8403 , FQU5P20 , FQU8P10 , FQU9N25 .

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