All MOSFET. FQU3N50C Equivalents Search

 

FQU3N50C Spec and Replacement


   Type Designator: FQU3N50C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO251 IPAK

 FQU3N50C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQU3N50C Specs

 ..1. Size:927K  fairchild semi
 fqd3n50c fqu3n50c.pdf pdf_icon

FQU3N50C

March 2008 QFET FQD3N50C / FQU3N50C 500V N-Channel MOSFET Features Description 2.5A, 500V, RDS(on) = 2.5 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 10 nC) transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. Low Crss ( typical 8.5pF) This advanced technology has been especially tai... See More ⇒

 9.1. Size:773K  fairchild semi
 fqu3n60ctu.pdf pdf_icon

FQU3N50C

August 2006 QFET FQD3N60C / FQU3N60C 600V N-Channel MOSFET Features Description 2.4A, 600V, RDS(on) = 3.4 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 10.5nC) DMOS technology. Low Crss ( typical 5pF) This advanced technology has been especially t... See More ⇒

 9.2. Size:575K  fairchild semi
 fqd3n60 fqu3n60.pdf pdf_icon

FQU3N50C

April 2000 TM QFET QFET QFET QFET FQD3N60 / FQU3N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 2.4A, 600V, RDS(on) = 3.6 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 10 nC) planar stripe, DMOS technology. Low Crss ( typical 5.5 pF) This advanced technology h... See More ⇒

 9.3. Size:705K  fairchild semi
 fqu3n40tu.pdf pdf_icon

FQU3N50C

April 2000 TM QFET QFET QFET QFET FQD3N40 / FQU3N40 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 2.0A, 400V, RDS(on) = 3.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. Low Crss ( typical 4.2 pF) This advanced technolog... See More ⇒

SHOW MORE

Detailed specifications: FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 , FQU2N90TUAM002 , AON6414A , FQU4N50TUWS , FQU5N40 , FDMC7582 , FQU5N60C , FDMQ8403 , FQU5P20 , FQU8P10 , FQU9N25 .

Keywords - FQU3N50C MOSFET specs

 FQU3N50C cross reference
 FQU3N50C equivalent finder
 FQU3N50C lookup
 FQU3N50C substitution
 FQU3N50C replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
Back to Top

 


 
.