Справочник MOSFET. DHS045N98D

 

DHS045N98D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: DHS045N98D
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 165 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 98 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Qg ⓘ - Общий заряд затвора: 57 nC
   tr ⓘ - Время нарастания: 17 ns
   Cossⓘ - Выходная емкость: 1225 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для DHS045N98D

   - подбор ⓘ MOSFET транзистора по параметрам

 

DHS045N98D Datasheet (PDF)

 ..1. Size:1370K  cn wxdh
 dhs045n98 dhs045n98f dhs045n98i dhs045n98e dhs045n98b dhs045n98d.pdf pdf_icon

DHS045N98D

DHS045N98/DHS045N98F/DHS045N98I/DHS045N98E/DHS045N98B/DHS045N98D120A 98V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 98VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 5.1mDS(on) (TYP)the RoHS standard.13 SI = 120AD2 Featur

 7.1. Size:1350K  cn wxdh
 dhs045n88 dhs045n88f dhs045n88i dhs045n88e dhs045n88b dhs045n88d.pdf pdf_icon

DHS045N98D

DHS045N88/DHS045N88F/DHS045N88I/DHS045N88E/DHS045N88B/DHS045N88D120A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 4.6mDS(on) (TYP)the RoHS standard.13 SI = 120AD2 Featur

 7.2. Size:1350K  cn wxdh
 dhs045n85 dhs045n85f dhs045n85i dhs045n85e dhs045n85b dhs045n85d.pdf pdf_icon

DHS045N98D

DHS045N85/DHS045N85F/DHS045N85I/DHS045N85E/DHS045N85B/DHS045N85D120A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 4.7mDS(on) (TYP)the RoHS standard.13 SI = 120AD2 Featur

 9.1. Size:824K  cn wxdh
 dhs044n12 dhs044n12e.pdf pdf_icon

DHS045N98D

DHS044N12/DHS044N12E160A 120V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 DV = 120VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 3.7mDS(on) (TYP)the RoHS standard.13 SI = 160AD2 Features Low on resistance Low gate charge

ПОКАЗАТЬ ЕЩЁ

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