DHS045N98D Datasheet. Specs and Replacement

Type Designator: DHS045N98D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 165 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 98 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 1225 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO252

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DHS045N98D datasheet

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 dhs045n98 dhs045n98f dhs045n98i dhs045n98e dhs045n98b dhs045n98d.pdf pdf_icon

DHS045N98D

DHS045N98/DHS045N98F/DHS045N98I/ DHS045N98E/DHS045N98B/DHS045N98D 120A 98V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 98V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 5.1m DS(on) (TYP) the RoHS standard. 1 3 S I = 120A D 2 Featur... See More ⇒

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 dhs045n88 dhs045n88f dhs045n88i dhs045n88e dhs045n88b dhs045n88d.pdf pdf_icon

DHS045N98D

DHS045N88/DHS045N88F/DHS045N88I/ DHS045N88E/DHS045N88B/DHS045N88D 120A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.6m DS(on) (TYP) the RoHS standard. 1 3 S I = 120A D 2 Featur... See More ⇒

 7.2. Size:1350K  cn wxdh
 dhs045n85 dhs045n85f dhs045n85i dhs045n85e dhs045n85b dhs045n85d.pdf pdf_icon

DHS045N98D

DHS045N85/DHS045N85F/DHS045N85I/ DHS045N85E/DHS045N85B/DHS045N85D 120A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.7m DS(on) (TYP) the RoHS standard. 1 3 S I = 120A D 2 Featur... See More ⇒

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 dhs044n12 dhs044n12e.pdf pdf_icon

DHS045N98D

DHS044N12/DHS044N12E 160A 120V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D V = 120V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 3.7m DS(on) (TYP) the RoHS standard. 1 3 S I = 160A D 2 Features Low on resistance Low gate charge... See More ⇒

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Detailed specifications: DHS035N88E, DHS035N88I, DHS045N88D, DHS045N88E, DHS045N88F, DHS045N88I, DHS045N98, DHS045N98B, 2SK3878, DHS045N98E, DHS045N98F, DHS045N98I, DSG028N10NA, DSG030N10N3, DSG041N08NA, DSG045N14N, DSG047N08N3

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