DSE026N10N3A - параметры транзистора MOSFET, его аналоги, datasheet

DSE026N10N3A Datasheet (PDF)

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DSE026N10N3A 100V/2.2m/180A N-MOSFET Features Key ParametersVDS AEC-Q101 qualified 100VRDS(on)typ. Low on resistance 2.2m Low reverse transfer capacitances VTH 3VID(Silicon limit) 100% single pulse avalanche energy test 240AID (Package limit) 100% VDS test 180ACiss@10V Pb-Free plating / Halogen-Free / RoHS compliant 7035pFQgd 27nCApplication

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DSE026N10NA&DSG028N10NA180A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced splite gate trench technology design, providedR = 2.4mT0-220DS(on) (TYP)excellent Rdson and low gate charge. Which accords withGthe RoHS standard. R = 2.2mT0-263DS(on) (TYP)13 SI = 180AD2

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DSG030N10N3/DSE028N10N3170A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedV = 100VDSSadvanced splite gate trench technology design, provided2 Dexcellent Rdson and low gate charge. Which accords withR = 2.6mTO-220DS(on) (TYP)the RoHS standard.GR = 2.4mTO-263DS(on) (TYP)12 Features 3

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DSE022N10N3&DSG024N10N3 100V/1.7m/240A N-MOSFET Features Key ParametersVDS Low on resistance 100VRDS(on)typ.TO-263 Low reverse transfer capacitances 1.7mRDS(on)typ.TO-220 100% single pulse avalanche energy test 1.9m 100% VDS test VTH 3VIDSilicon limit Pb-Free plating / Halogen-Free / RoHS compliant 364AIDPackage limit240A

Другие MOSFET... DHS046N10B , DHS046N10D , DHS046N10E , DHS046N10F , DHS046N10I , DHS051N10P , DHS052N10 , DHS052N10B , IRFB31N20D , DSE026N10NA , DSE028N10N3 , DSE043N14N , DSE047N08N3 , DSE050N14N , DSE051N08N3 , DSE054N10N3 , DSE058N15NA .