JBE113P - аналоги, параметры транзистора - Справочник транзисторов

JBE113P даташит

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100V, 175A, 3.2m N-channel Power SGT MOSFET JBE113P Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 175 A RDS(ON)_Typ(@VGS=10V 3.2 mW Applications Load Switch PWM Application Power Management D G S Schem

9.1. Size:1231K jiejie micro
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110V, 199A, 2.3m N-channel Power SGT MOSFET JBE112T Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 110 V 100% Vds TESTED VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 199 A Pb-free plating RDS(ON)_Typ(@VGS=10V 2.3 mW Applications Load Switch PWM Application Power Manage

9.2. Size:1343K jiejie micro
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110V, 220A, 2.2m N-channel Power SGT MOSFET JBE112Q Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 110 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 220 A RDS(ON)_Typ(@VGS=10V 2.2 mW Applications Load Switch PWM Application Power Management D G S TO-26

9.3. Size:1340K jiejie micro
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110V, 294A, 2.0m N-channel Power SGT MOSFET JBE111P Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 110 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 294 A RDS(ON)_Typ(@VGS=10V 2.0 mW Applications Load Switch PWM Application Power Management D G S TO-26

Другие MOSFET... JMSH0602PK , JBE102G , JBE102T , JBE102Y , JBE103T , JBE111P , JBE112Q , JBE112T , IRFZ48N , JBL083M , JBL101N , JMSH0605AGD , JMSH0605AGDQ , JMSH0606AG , JMSH0606AGQ , JMSH0606AK , JMSH0606AKQ .