JMSH0605AGDQ. Аналоги и основные параметры
Наименование производителя: JMSH0605AGDQ
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 38 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 56 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 27 ns
Cossⓘ - Выходная емкость: 940 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0058 Ohm
Тип корпуса: PDFN5X6-8L-D
Аналог (замена) для JMSH0605AGDQ
- подборⓘ MOSFET транзистора по параметрам
JMSH0605AGDQ даташит
..1. Size:317K jiejie micro
jmsh0605agdq.pdf 
JMSH0605AGDQ 60V 4.7m N-Ch Power MOSFET Features Product Summary Ultra-low RDS(ON) Parameter Value Unit VDS 60 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 56 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 4.7 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications PDFN5x6-8L
3.1. Size:316K jiejie micro
jmsh0605agd.pdf 
JMSH0605AGD 60V 4.7m N-Ch Power MOSFET Features Product Summary Ultra-low RDS(ON) Parameter Value Unit VDS 60 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 54 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 4.7 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial Auto
7.1. Size:1293K jiejie micro
jmsh0602pk.pdf 
60V, 112A, 1.9m N-channel Power SGT MOSFET JMSH0602PK Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 60 V 100% Vds TESTED VGS(th)_Typ 2.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 112 A Pb-free plating RDS(ON)_Typ(@VGS=10V 1.9 mW Applications Load Switch PWM Application Power Manag
7.2. Size:349K jiejie micro
jmsh0606ak.pdf 
JMSH0606AK 60V 4.4m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 90 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 4.4 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial Autom
7.3. Size:345K jiejie micro
jmsh0602ag.pdf 
JMSH0602AG 60V 1.9m N-Ch Power MOSFET Features Product Summary Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 175 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.9 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Indus
7.4. Size:1201K jiejie micro
jmsh0606pgq.pdf 
60V, 118A, 4.5m N-channel Power SGT MOSFET JMSH0606PGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 60 V 100% UIS Tested VGS(th)_Typ 2.8 V 100% Vds Tested ID(@VGS=10V) 118 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 4.5 mW AEC-Q101 Qualified Applications Load Switch PWM Applicatio
7.5. Size:412K jiejie micro
jmsh0601bgq.pdf 
JMSH0601BGQ 60V 1.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 314 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.0 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications
7.6. Size:1179K jiejie micro
jmsh0606pgd.pdf 
60V, 88A, 4.1m Dual N-channel Power SGT MOSFET JMSH0606PGD Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 2.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 88 A RDS(ON)_Typ(@VGS=10V 4.1 mW Applications Load Switch PWM Application Power Management PDFN5X6-8L
7.7. Size:389K jiejie micro
jmsh0603akq.pdf 
JMSH0603AKQ 60V 2.6m N-Ch Power MOSFET Features Product Summary Parameter Typ. Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th) 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 151 A RDS(ON) (@ VGS = 10V) 2.6 m Pb-free Lead Plating Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications TO-252-3L Top Vie
7.8. Size:399K jiejie micro
jmsh0601bg.pdf 
JMSH0601BG 60V 1.0m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 303 A RDS(ON)_Typ (@ VGS = 10V) 1.0 m Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Power Management in Computing, CE,
7.9. Size:386K jiejie micro
jmsh0606akq.pdf 
JMSH0606AKQ 60V 4.4m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 95 A RDS(ON)_Typ (@ VGS = 10V) 4.4 m Pb-free Lead Plating Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications TO-252-3L T
7.10. Size:1197K jiejie micro
jmsh0603pg.pdf 
60V, 106A, 2.6m N-channel Power SGT MOSFET JMSH0603PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 2.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 106 A RDS(ON)_Typ(@VGS=10V 2.6 mW Applications Load Switch PWM Application Power Management D G S PDFN5
7.11. Size:342K jiejie micro
jmsh0601ag.pdf 
JMSH0601AG 60V 1.4m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 197 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.4 m Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, IE 4.0, Communic
7.12. Size:320K jiejie micro
jmsh0602aeq.pdf 
JMSH0602AEQ 60V 2.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 224 A RDS(ON)_Typ (@ VGS = 10V) 2.0 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications TO-263-3L
7.13. Size:1234K jiejie micro
jmsh0606pu.pdf 
60V, 55A, 4.5m N-channel Power SGT MOSFET JMSH0606PU Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 55 A Pb-free plating RDS(ON)_Typ(@VGS=10V 4.5 mW Applications Load Switch PWM Application Power Managem
7.14. Size:382K jiejie micro
jmsh0601atlq.pdf 
JMSH0601ATLQ 60V 1.2m TOLL N-Ch Power MOSFET Product Summary Features Ultra low ON-resistance, RDS(ON) Parameter Value Unit VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 328 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.2 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Appli
7.15. Size:1255K jiejie micro
jmsh0606pc.pdf 
60V, 103A, 4.8m N-channel Power SGT MOSFET JMSH0606PC Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 103 A RDS(ON)_Typ(@VGS=10V 4.8 mW Applications Load Switch PWM Application Power Management D G S TO-2
7.16. Size:338K jiejie micro
jmsh0606ag.pdf 
JMSH0606AG 60V 3.7m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 2.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 98 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.7 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial Autom
7.17. Size:407K jiejie micro
jmsh0602akq.pdf 
JMSH0602AKQ 60V 2.2m N-Ch Power MOSFET Features Product Summary Parameter Typ. Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th) 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 206 A RDS(ON) (@ VGS = 10V) 2.2 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications TO-252-3L Top Vie
7.18. Size:386K jiejie micro
jmsh0602ac jmsh0602ae.pdf 
JMSH0602AC JMSH0602AE 60V 1.8m N-Ch Power MOSFET Features Product Summary Ultra-low RDS(ON) Parameter Value Unit Low Gate Charge VDS 60 V 100% UIS Tested, 100% Rg Tested VGS(th)_Typ 3.0 V ID (@ VGS = 10V) (1) 195 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.8 m Halogen-free and RoHS-compliant Applications Power Management in Computing,
7.19. Size:343K jiejie micro
jmsh0606au.pdf 
JMSH0606AU 60V 4.6m N-Ch Power MOSFET Features Product Summary Ultra-low RDS(ON) Parameter Value Unit VDS 60 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 62 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 4.6 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial Autom
7.20. Size:410K jiejie micro
jmsh0602agq.pdf 
JMSH0602AGQ 60V 1.9m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 168 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.9 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications
7.21. Size:1281K jiejie micro
jmsh0603pgq.pdf 
60V, 152A, 2.6m N-channel Power SGT MOSFET JMSH0603PGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 60 V 100% UIS Tested VGS(th)_Typ 2.6 V 100% Vds Tested ID(@VGS=10V) 152 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 2.6 mW AEC-Q101 Qualified Applications Load Switch PWM Applica
7.22. Size:1343K jiejie micro
jmsh0602pe.pdf 
60V, 218A, 1.9m N-channel Power SGT MOSFET JMSH0602PE Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 2.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 218 A RDS(ON)_Typ(@VGS=10V 1.9 mW Applications Load Switch PWM Application Power Management TO-263 -3L Sc
7.23. Size:350K jiejie micro
jmsh0606agq.pdf 
JMSH0606AGQ 60V 3.7m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 2.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 103 A RDS(ON)_Typ (@ VGS = 10V) 3.7 m Pb-free Lead Plating Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications PDFN5x6-
7.24. Size:349K jiejie micro
jmsh0603ak.pdf 
JMSH0603AK 60V 2.6m N-Ch Power MOSFET Features Product Summary Parameter Typ. Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 145 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 2.6 m Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, IE 4.0, Com
7.25. Size:1256K jiejie micro
jmsh0601ptl.pdf 
60V, 332A, 1.2m N-channel Power SGT MOSFET JMSH0601PTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 2.5 V Halogen-free; RoHS-compliant ID(@VGS=10V) 332 A RDS(ON)_Typ(@VGS=10V 1.2 mW Applications Load Switch PWM Application Power Management PowerJE 10x1
7.26. Size:1241K jiejie micro
jmsh0603pe.pdf 
60V, 184A, 2.5m N-channel Power SGT MOSFET JMSH0603PE Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 2.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 184 A RDS(ON)_Typ(@VGS=10V 2.5 mW Applications Load Switch PWM Application Power Management D G S TO-2
7.27. Size:644K jiejie micro
jmsh0602pg.pdf 
JMSH0602PG 60V 1.6m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 200 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.6 mW Applications Power Management in Computing, CE, IE 4.0, Communications Current Switching in
7.28. Size:381K jiejie micro
jmsh0601atl.pdf 
JMSH0601ATL 60V 1.2m TOLL N-Ch Power MOSFET Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 348 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.2 m Halogen-free and RoHS-compliant Applications Power Management in Computi
7.29. Size:1190K jiejie micro
jmsh0606pg.pdf 
60V, 114A, 4.5m N-channel Power SGT MOSFET JMSH0606PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 114 A RDS(ON)_Typ(@VGS=10V 4.5 mW Applications Load Switch PWM Application Power Management D G S PDFN
7.30. Size:1249K jiejie micro
jmsh0606pk.pdf 
60V, 68A, 4.5m N-channel Power SGT MOSFET JMSH0606PK Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 68 A RDS(ON)_Typ(@VGS=10V 4.5 mW Applications Load Switch PWM Application Power Management D G S TO-252
7.31. Size:415K jiejie micro
jmsh0601agq.pdf 
JMSH0601AGQ 60V 1.3m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 225 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.3 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications
7.32. Size:652K jiejie micro
jmsh0603mgq.pdf 
60V, 163A, 2.3m N-channel Power SGT MOSFET JMSH0603MGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 60 V 100% UIS Tested VGS(th)_Typ 2.8 V 100% Vds Tested ID(@VGS=10V) 163 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 2.3 m AEC-Q101 Qualified Applications Load Switch PWM Applica
7.33. Size:1176K jiejie micro
jmsh0606pgdq.pdf 
60V, 61A, 4.1m Dual N-channel Power SGT MOSFET JMSH0606PGDQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 60 V 100% UIS Tested VGS(th)_Typ 2.7 V 100% Vds Tested ID(@VGS=10V) 61 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 4.1 mW AEC-Q101 Qualified Applications Load Switch PWM Appli
7.34. Size:1272K jiejie micro
jmsh0602pc.pdf 
60V, 178A, 2.4m N-channel Power SGT MOSFET JMSH0602PC Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 178 A Pb-free plating RDS(ON)_Typ(@VGS=10V 2.4 mW Applications Load Switch PWM Application Power Manag
7.35. Size:1272K jiejie micro
jmsh0603pk.pdf 
60V, 86A, 2.8m N-channel Power SGT MOSFET JMSH0603PK Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 2.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 86 A RDS(ON)_Typ(@VGS=10V 2.8 mW Applications Load Switch PWM Application Power Management D G S TO-252
7.36. Size:349K jiejie micro
jmsh0602ak.pdf 
JMSH0602AK 60V 2.2m N-Ch Power MOSFET Features Product Summary Parameter Typ. Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th) 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 195 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 2.2 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial Automation, C
7.37. Size:1193K jiejie micro
jmsh0602pgq.pdf 
60V, 179A, 1.6m N-channel Power SGT MOSFET JMSH0602PGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 60 V 100% UIS Tested VGS(th)_Typ 3.0 V 100% Vds Tested ID(@VGS=10V) 179 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 1.6 mW AEC-Q101 Qualified Applications Load Switch PWM Applicat
Другие MOSFET... JBE103T
, JBE111P
, JBE112Q
, JBE112T
, JBE113P
, JBL083M
, JBL101N
, JMSH0605AGD
, IRF9640
, JMSH0606AG
, JMSH0606AGQ
, JMSH0606AK
, JMSH0606AKQ
, JMSH0606AU
, JMSH0606PC
, JMSH0606PG
, JMSH0606PGD
.
History: RTQ045N03TR
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