JMSH1001BTL - Аналоги. Основные параметры
Наименование производителя: JMSH1001BTL
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 326
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 300
A
Tj ⓘ - Максимальная температура канала: 175
°C
tr ⓘ -
Время нарастания: 45
ns
Cossⓘ - Выходная емкость: 1512
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.002
Ohm
Тип корпуса:
TOLL
Аналог (замена) для JMSH1001BTL
JMSH1001BTL технические параметры
..1. Size:327K jiejie micro
jmsh1001btl.pdf 

JMSH1001BTL 100V 1.7m TOLL N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 300 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.7 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Indus
6.1. Size:1263K jiejie micro
jmsh1001mtl.pdf 

100V, 467A, 1.0m N-channel Power SGT MOSFET JMSH1001MTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 467 A RDS(ON)_Typ(@VGS=10V 1.0 mW Applications Load Switch PWM Application Power Management PowerJE 10
6.2. Size:1257K jiejie micro
jmsh1001ntlq.pdf 

100V, 312A, 1.7m N-channel Power SGT MOSFET JMSH1001NTLQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 100 V 100% UIS Tested VGS(th)_Typ 2.9 V 100% Vds Tested ID(@VGS=10V) 312 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 1.7 mW AEC-Q101 Qualified Applications Load Switch PWM Appli
6.3. Size:1262K jiejie micro
jmsh1001ptl.pdf 

100V, 367A, 1.2m N-channel Power SGT MOSFET JMSH1001PTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 2.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 367 A RDS(ON)_Typ(@VGS=10V 1.2 mW Applications Load Switch PWM Application Power Management PowerJE 10
6.4. Size:1183K jiejie micro
jmsh1001ntl.pdf 

100V, 400A, 1.4m N-channel Power SGT MOSFET JMSH1001NTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 2.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 400 A RDS(ON)_Typ(@VGS=10V 1.4 mW Applications Load Switch PWM Application Power Management PowerJE 10
6.5. Size:622K jiejie micro
jmsh1001atlq.pdf 

JMSH1001ATLQ 100V 1.3mW TOLL N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 479 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.3 mW Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applicat
6.6. Size:1182K jiejie micro
jmsh1001ne7.pdf 

100V, 300A, 1.4m N-channel Power SGT MOSFET JMSH1001NE7 Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 300 A RDS(ON)_Typ(@VGS=10V 1.4 mW Applications Load Switch PWM Application Power Management TO-263 -7L
6.7. Size:325K jiejie micro
jmsh1001atl.pdf 

JMSH1001ATL 100V 1.3m TOLL N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 411 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.3 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Indust
6.8. Size:365K jiejie micro
jmsh1001nc jmsh1001ne.pdf 

JMSH1001NC JMSH1001NE 100V 1.6m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 353 A RDS(ON)_Typ (@ VGS = 10V) 1.6 m Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool,
6.9. Size:305K jiejie micro
jmsh1001ae7.pdf 

JMSH1001AE7 100V 1.6m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 290 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.6 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial
6.10. Size:353K jiejie micro
jmsh1001ns.pdf 

JMSH1001NS 100V 1.9m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 308 A RDS(ON)_Typ (@ VGS = 10V) 1.9 m Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-vehicle, R
6.11. Size:350K jiejie micro
jmsh1001ae7q.pdf 

JMSH1001AE7Q 100V 1.6m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 350 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.6 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applica
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