JMSH0704PE datasheet, подбор замены

 ..1. Size:1121K  jiejie micro
 jmsh0704pe.pdf 

70V, 171A, 3.2m N-channel Power SGT MOSFET JMSH0704PE Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 70 V 100% Vds TESTED VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 171 A RDS(ON)_Typ(@VGS=10V Pb-free plating 3.2 mW Applications Load Switch PWM Application Power Man

 5.1. Size:1148K  jiejie micro
 jmsh0704pc.pdf 

70V, 171A, 3.5m N-channel Power SGT MOSFET JMSH0704PC Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 70 V 100% Vds TESTED VGS(th)_Typ 3.1 V Halogen-free; RoHS-compliant ID(@VGS=10V) 171 A RDS(ON)_Typ(@VGS=10V 3.5 Pb-free plating mW Applications Load Switch PWM Application Power Manage

 7.1. Size:1121K  jiejie micro
 jmsh0702pe.pdf 

70V, 230A, 1.8m N-channel Power SGT MOSFET JMSH0702PE Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 70 V 100% Vds TESTED VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 230 A Pb-free plating RDS(ON)_Typ(@VGS=10V 1.8 mW Applications Load Switch PWM Application Power Managem

 9.1. Size:332K  jiejie micro
 jmsh0402bgq.pdf 

JMSH0402BGQ 40V 2.0m N-Ch Power MOSFET Features Product Summary Ultra-low ON-resistance, RDS(ON) Parameter Typ. Unit VDS 40 V Low Gate Charge, Qg VGS(th) 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 166 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V) 2.0 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications PDFN5x6-

 9.2. Size:1293K  jiejie micro
 jmsh0602pk.pdf 

60V, 112A, 1.9m N-channel Power SGT MOSFET JMSH0602PK Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 60 V 100% Vds TESTED VGS(th)_Typ 2.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 112 A Pb-free plating RDS(ON)_Typ(@VGS=10V 1.9 mW Applications Load Switch PWM Application Power Manag

 9.3. Size:1250K  jiejie micro
 jmsh0801pe.pdf 

80V, 313A, 1.5m N-channel Power SGT MOSFET JMSH0801PE Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 313 A RDS(ON)_Typ(@VGS=10V 1.5 mW Applications Load Switch PWM Application Power Management TO-263 -3L S

 9.4. Size:350K  jiejie micro
 jmsh0803ngs.pdf 

JMSH0803NGS 80V 3.2m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 80 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 153 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.2 m Halogen-free and RoHS-compliant Applications Power Management in Telecom., Industrial Au

 9.5. Size:1235K  jiejie micro
 jmsh0406pu.pdf 

40V, 54A, 4.1m N-channel Power SGT MOSFET JMSH0406PU Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 2.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 54 A Pb-free plating RDS(ON)_Typ(@VGS=10V 4.1 mW Applications Load Switch PWM Application Power Managem

 9.6. Size:349K  jiejie micro
 jmsh0606ak.pdf 

JMSH0606AK 60V 4.4m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 90 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 4.4 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial Autom

 9.7. Size:305K  jiejie micro
 jmsh0406ak.pdf 

JMSH0406AK 40V 5.0m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 70 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 5.0 m Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, I

 9.8. Size:324K  jiejie micro
 jmsh0401cg.pdf 

JMSH0401CG 40V 1.1m N-Ch Power MOSFET Features Product Summary Ultra-low RDS(ON) Parameter Value Unit VDS 40 V Low Gate Charge VGS(th) 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 240 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V) 1.1 m Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, IE 4.0, Communicat

 9.9. Size:345K  jiejie micro
 jmsh0602ag.pdf 

JMSH0602AG 60V 1.9m N-Ch Power MOSFET Features Product Summary Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 175 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.9 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Indus

 9.10. Size:401K  jiejie micro
 jmsh0401agq.pdf 

JMSH0401AGQ 40V 1.3m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 197 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.3 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

 9.11. Size:1201K  jiejie micro
 jmsh0606pgq.pdf 

60V, 118A, 4.5m N-channel Power SGT MOSFET JMSH0606PGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 60 V 100% UIS Tested VGS(th)_Typ 2.8 V 100% Vds Tested ID(@VGS=10V) 118 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 4.5 mW AEC-Q101 Qualified Applications Load Switch PWM Applicatio

 9.12. Size:345K  jiejie micro
 jmsh0406ag.pdf 

JMSH0406AG 40V 4.1m N-Ch Power MOSFET Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS Low Gate Charge, Qg 40 V VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 86 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 4.1 m Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, IE

 9.13. Size:326K  jiejie micro
 jmsh040sagq.pdf 

JMSH040SAGQ 40V 0.56m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 40 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 400 A RDS(ON)_Typ (@ VGS = 10V) 0.56 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications PDFN5x6-

 9.14. Size:1203K  jiejie micro
 jmsh0401mgq.pdf 

40V, 223A, 1.4m N-channel Power SGT MOSFET JMSH0401MGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 40 V VGS(th)_Typ 2.7 V 100% UIS Tested ID(@VGS=10V) 223 A 100% Vds Tested RDS(ON)_Typ(@VGS=10V 1.4 mW Halogen-free; RoHS-compliant AEC-Q101 Qualified Applications Load Switch PWM Applicat

 9.15. Size:412K  jiejie micro
 jmsh0601bgq.pdf 

JMSH0601BGQ 60V 1.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 314 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.0 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

 9.16. Size:1174K  jiejie micro
 jmsh0406pgdq.pdf 

40V, 51A, 5.1m Dual N-channel Power SGT MOSFET JMSH0406PGDQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 40 V 100% UIS Tested VGS(th)_Typ 2.8 V 100% Vds Tested ID(@VGS=10V) 51 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 5.1 mW AEC-Q101 Qualified Applications Load Switch PWM Appli

 9.17. Size:1236K  jiejie micro
 jmsh0406pg.pdf 

40V, 103A, 3.9m N-channel Power SGT MOSFET JMSH0406PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 2.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 103 A RDS(ON)_Typ(@VGS=10V 3.9 mW Applications Load Switch PWM Application Power Management D G S PDFN

 9.18. Size:1225K  jiejie micro
 jmsh0403pghw.pdf 

40V, 131A, 3.0m N-channel Power SGT MOSFET JMSH0403PGHW Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 3.1 V Halogen-free; RoHS-compliant ID(@VGS=10V) 131 A RDS(ON)_Typ(@VGS=10V 3.0 mW Applications Load Switch PWM Application Power Management PDFN5X6-8L-H

 9.19. Size:1174K  jiejie micro
 jmsh0401pts.pdf 

40V, 361A, 0.9m N-channel Power SGT MOSFET JMSH0401PTS Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 2.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 361 A RDS(ON)_Typ(@VGS=10V 0.9 mW Applications Load Switch PWM Application Power Management D G S Sch

 9.20. Size:353K  jiejie micro
 jmsh0402akq.pdf 

JMSH0402AKQ 40V 2.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 170 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 2.0 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

 9.21. Size:366K  jiejie micro
 jmsh0406au.pdf 

JMSH0406AU 40V 4.3m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 58 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 4.3 m Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, IE

 9.22. Size:1252K  jiejie micro
 jmsh0406pkq.pdf 

40V, 66A, 4.8m N-channel Power SGT MOSFET JMSH0406PKQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 40 V 100% UIS Tested VGS(th)_Typ 3.0 V 100% Vds Tested ID(@VGS=10V) 66 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 4.8 mW AEC-Q101 Qualified Applications Load Switch PWM Applicat

 9.23. Size:1179K  jiejie micro
 jmsh0606pgd.pdf 

60V, 88A, 4.1m Dual N-channel Power SGT MOSFET JMSH0606PGD Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 2.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 88 A RDS(ON)_Typ(@VGS=10V 4.1 mW Applications Load Switch PWM Application Power Management PDFN5X6-8L

 9.24. Size:389K  jiejie micro
 jmsh0603akq.pdf 

JMSH0603AKQ 60V 2.6m N-Ch Power MOSFET Features Product Summary Parameter Typ. Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th) 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 151 A RDS(ON) (@ VGS = 10V) 2.6 m Pb-free Lead Plating Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications TO-252-3L Top Vie

 9.25. Size:1191K  jiejie micro
 jmsh0403pgq.pdf 

40V, 143A, 2.5m N-channel Power SGT MOSFET JMSH0403PGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 40 V 100% UIS Tested VGS(th)_Typ 3.1 V 100% Vds Tested ID(@VGS=10V) 143 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 2.5 mW AEC-Q101 Qualified Applications Load Switch PWM Applicat

 9.26. Size:355K  jiejie micro
 jmsh0401cgq.pdf 

 9.27. Size:399K  jiejie micro
 jmsh0601bg.pdf 

JMSH0601BG 60V 1.0m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 303 A RDS(ON)_Typ (@ VGS = 10V) 1.0 m Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Power Management in Computing, CE,

 9.28. Size:386K  jiejie micro
 jmsh0606akq.pdf 

JMSH0606AKQ 60V 4.4m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 95 A RDS(ON)_Typ (@ VGS = 10V) 4.4 m Pb-free Lead Plating Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications TO-252-3L T

 9.29. Size:358K  jiejie micro
 jmsh0401atl.pdf 

JMSH0401ATL 40V 1.0m TOLL N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 40 V Low Gate Charge VGS(th)_Typ 2.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 336 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.0 m Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, IE

 9.30. Size:1304K  jiejie micro
 jmsh0406pgd.pdf 

40V, 50A, 4.9m N-channel Power SGT MOSFET JMSH0406PGD Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 2.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 50 A RDS(ON)_Typ(@VGS=10V 4.9 mW Applications Load Switch PWM Application Power Management PDFN5X6-8L-D S

 9.31. Size:379K  jiejie micro
 jmsh0805pc jmsh0805pe.pdf 

JMSH0805PC JMSH0805PE 80V 4.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 80 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 154 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 4.0 m Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-v

 9.32. Size:335K  jiejie micro
 jmsh0402aeq.pdf 

JMSH0402AEQ 40V 1.3m N-Ch Power MOSFET Features Product Summary Parameter Typ. Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Low Gate Charge, Qg VGS(th) 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 253 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 1.3 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications TO-263-3L

 9.33. Size:1197K  jiejie micro
 jmsh0603pg.pdf 

60V, 106A, 2.6m N-channel Power SGT MOSFET JMSH0603PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 2.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 106 A RDS(ON)_Typ(@VGS=10V 2.6 mW Applications Load Switch PWM Application Power Management D G S PDFN5

 9.34. Size:388K  jiejie micro
 jmsh0805pk.pdf 

JMSH0805PK 80V 3.7m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 80 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 130 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.7 m Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-vehicle, Robo

 9.35. Size:342K  jiejie micro
 jmsh0601ag.pdf 

JMSH0601AG 60V 1.4m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 197 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.4 m Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, IE 4.0, Communic

 9.36. Size:557K  jiejie micro
 jmsh0803ags.pdf 

JMSH0803AGS 80V 3.2mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 80 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 153 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.2 mW Halogen-free and RoHS-compliant Applications Power Management in Telecom., Industrial Automa

 9.37. Size:320K  jiejie micro
 jmsh0602aeq.pdf 

JMSH0602AEQ 60V 2.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 224 A RDS(ON)_Typ (@ VGS = 10V) 2.0 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications TO-263-3L

 9.38. Size:1234K  jiejie micro
 jmsh0606pu.pdf 

60V, 55A, 4.5m N-channel Power SGT MOSFET JMSH0606PU Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 55 A Pb-free plating RDS(ON)_Typ(@VGS=10V 4.5 mW Applications Load Switch PWM Application Power Managem

 9.39. Size:1208K  jiejie micro
 jmsh0401pg.pdf 

40V, 211A, 0.8m N-channel Power SGT MOSFET JMSH0401PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 40 V 100% Vds TESTED VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 211 A Pb-free plating RDS(ON)_Typ(@VGS=10V 0.8 mW Applications Load Switch PWM Application Power Manage

 9.40. Size:1252K  jiejie micro
 jmsh0802pe.pdf 

80V, 263A, 1.6m N-channel Power SGT MOSFET JMSH0802PE Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 263 A RDS(ON)_Typ(@VGS=10V 1.6 mW Applications Load Switch PWM Application Power Management TO-263 -3L S

 9.41. Size:382K  jiejie micro
 jmsh0601atlq.pdf 

JMSH0601ATLQ 60V 1.2m TOLL N-Ch Power MOSFET Product Summary Features Ultra low ON-resistance, RDS(ON) Parameter Value Unit VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 328 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.2 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Appli

 9.42. Size:1255K  jiejie micro
 jmsh0606pc.pdf 

60V, 103A, 4.8m N-channel Power SGT MOSFET JMSH0606PC Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 103 A RDS(ON)_Typ(@VGS=10V 4.8 mW Applications Load Switch PWM Application Power Management D G S TO-2

 9.43. Size:338K  jiejie micro
 jmsh0606ag.pdf 

JMSH0606AG 60V 3.7m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 2.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 98 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.7 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial Autom

 9.44. Size:1229K  jiejie micro
 jmsh0406pgq.pdf 

40V, 106A, 4.1m N-channel Power SGT MOSFET JMSH0406PGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 40 V 100% UIS Tested VGS(th)_Typ 3.1 V 100% Vds Tested ID(@VGS=10V) 106 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 4.1 mW AEC-Q101 Qualified Applications Load Switch PWM Applica

 9.45. Size:1235K  jiejie micro
 jmsh0403pu.pdf 

40V, 75A, 2.4m N-channel Power SGT MOSFET JMSH0403PU Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 2.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 75 A Pb-free plating RDS(ON)_Typ(@VGS=10V 2.4 mW Applications Load Switch PWM Application Power Managem

 9.46. Size:390K  jiejie micro
 jmsh0406agdq.pdf 

JMSH0406AGDQ 40V 5.2m Dual N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 68 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 5.2 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applicatio

 9.47. Size:632K  jiejie micro
 jmsh040sptsq.pdf 

40V, 430A, 0.85m N-channel Power SGT MOSFET JMSH040SPTSQ Product Summary Features Ultra-low ON-resistance RDS(ON) Parameters Value Unit Low Gate Charge VDSS 40 V 100% UIS Tested VGS(th)_Typ 2.6 V 100% Vds Tested ID(@VGS=10V) 430 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 0.85 m AEC-Q101 Qualified Applications Load Switch PWM Appl

 9.48. Size:1271K  jiejie micro
 jmsh0802mc.pdf 

80V, 249A, 2.0m N-channel Power SGT MOSFET JMSH0802MC Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 3.1 V Halogen-free; RoHS-compliant ID(@VGS=10V) 249 A RDS(ON)_Typ(@VGS=10V 2.0 mW Applications Load Switch PWM Application Power Management D G S TO-22

 9.49. Size:407K  jiejie micro
 jmsh0602akq.pdf 

JMSH0602AKQ 60V 2.2m N-Ch Power MOSFET Features Product Summary Parameter Typ. Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th) 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 206 A RDS(ON) (@ VGS = 10V) 2.2 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications TO-252-3L Top Vie

 9.50. Size:569K  jiejie micro
 jmsh0402agq.pdf 

JMSH0402AGQ 40V 1.6mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 182 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.6 mW Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications PDFN

 9.51. Size:386K  jiejie micro
 jmsh0602ac jmsh0602ae.pdf 

JMSH0602AC JMSH0602AE 60V 1.8m N-Ch Power MOSFET Features Product Summary Ultra-low RDS(ON) Parameter Value Unit Low Gate Charge VDS 60 V 100% UIS Tested, 100% Rg Tested VGS(th)_Typ 3.0 V ID (@ VGS = 10V) (1) 195 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.8 m Halogen-free and RoHS-compliant Applications Power Management in Computing,

 9.52. Size:1243K  jiejie micro
 jmsh0803mc.pdf 

80V, 165A, 3.0m N-channel Power SGT MOSFET JMSH0803MC Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 165 A RDS(ON)_Typ(@VGS=10V 3.0 mW Applications Load Switch PWM Application Power Management D G S TO-22

 9.53. Size:1236K  jiejie micro
 jmsh0406puq.pdf 

40V, 57A, 4.1m N-channel Power SGT MOSFET JMSH0406PUQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 40 V 100% UIS Tested VGS(th)_Typ 2.8 V 100% Vds Tested ID(@VGS=10V) 57 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 4.1 mW AEC-Q101 Qualified Pb-free plating Applications Load Swit

 9.54. Size:1175K  jiejie micro
 jmsh0401ptsq.pdf 

40V, 381A, 0.9m N-channel Power SGT MOSFET JMSH0401PTSQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 40 V 100% UIS Tested VGS(th)_Typ 2.6 V 100% Vds Tested ID(@VGS=10V) 381 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 0.9 mW AEC-Q101 Qualified Applications Load Switch PWM Applica

 9.55. Size:343K  jiejie micro
 jmsh0606au.pdf 

JMSH0606AU 60V 4.6m N-Ch Power MOSFET Features Product Summary Ultra-low RDS(ON) Parameter Value Unit VDS 60 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 62 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 4.6 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial Autom

 9.56. Size:1129K  jiejie micro
 jmsh0406pk.pdf 

40V, 64A, 4.6m N-channel Power SGT MOSFET JMSH0406PK Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 64 A RDS(ON)_Typ(@VGS=10V 4.6 mW Applications Load Switch PWM Application Power Management D G S TO-252-

 9.57. Size:1256K  jiejie micro
 jmsh0804nc.pdf 

80V, 148A, 3.8m N-channel Power SGT MOSFET JMSH0804NC Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 148 A RDS(ON)_Typ(@VGS=10V 3.8 mW Applications Load Switch PWM Application Power Management D G S Sche

 9.58. Size:625K  jiejie micro
 jmsh0401atlq.pdf 

JMSH0401ATLQ 40V 1.0mW TOLL N-Ch Power MOSFET Features Product Summary Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 337 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.0 mW Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

 9.59. Size:410K  jiejie micro
 jmsh0602agq.pdf 

JMSH0602AGQ 60V 1.9m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 168 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.9 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

 9.60. Size:562K  jiejie micro
 jmsh0401atsq.pdf 

JMSH0401ATSQ 40V 0.9mW sTOLL N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Standard Level Threshold, VGS(th) VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 352 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 0.90 mW Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automoti

 9.61. Size:1281K  jiejie micro
 jmsh0603pgq.pdf 

60V, 152A, 2.6m N-channel Power SGT MOSFET JMSH0603PGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 60 V 100% UIS Tested VGS(th)_Typ 2.6 V 100% Vds Tested ID(@VGS=10V) 152 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 2.6 mW AEC-Q101 Qualified Applications Load Switch PWM Applica

 9.62. Size:402K  jiejie micro
 jmsh0401bgq.pdf 

JMSH0401BGQ 40V 0.90m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 276 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 0.90 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

 9.63. Size:349K  jiejie micro
 jmsh0804ng.pdf 

JMSH0804NG 85V 3.1m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 85 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 137 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.1 m Halogen-free and RoHS-compliant Applications Power Management in Telecom., Industrial Aut

 9.64. Size:368K  jiejie micro
 jmsh0403bgq.pdf 

 9.65. Size:377K  jiejie micro
 jmsh0401ag.pdf 

JMSH0401AG 40V 1.3m N-Ch Power MOSFET Features Product Summary Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 190 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.3 m Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, IE

 9.66. Size:285K  jiejie micro
 jmsh0406agd.pdf 

JMSH0406AGD 40V 5.2m Dual N-Ch Power MOSFET Features Product Summary Ultra-low ON-resistance, RDS(ON) Parameter Value Unit Low Gate Charge, Qg VDS 40 V VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 64 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 5.2 m Halogen-free and RoHS-compliant Applications Power Management in Computing, CE

 9.67. Size:1343K  jiejie micro
 jmsh0602pe.pdf 

60V, 218A, 1.9m N-channel Power SGT MOSFET JMSH0602PE Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 2.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 218 A RDS(ON)_Typ(@VGS=10V 1.9 mW Applications Load Switch PWM Application Power Management TO-263 -3L Sc

 9.68. Size:350K  jiejie micro
 jmsh0606agq.pdf 

JMSH0606AGQ 60V 3.7m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 2.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 103 A RDS(ON)_Typ (@ VGS = 10V) 3.7 m Pb-free Lead Plating Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications PDFN5x6-

 9.69. Size:1609K  jiejie micro
 jmsh0802me.pdf 

80V, 254A, 1.8m N-channel Power SGT MOSFET JMSH0802ME Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 254 A RDS(ON)_Typ(@VGS=10V 1.8 mW Applications Load Switch PWM Application Power Management D G S TO-2

 9.70. Size:1261K  jiejie micro
 jmsh0802ptl.pdf 

80V, 333A, 1.3m N-channel Power SGT MOSFET JMSH0802PTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 333 A RDS(ON)_Typ(@VGS=10V 1.3 mW Applications Load Switch PWM Application Power Management PowerJE 10x1

 9.71. Size:349K  jiejie micro
 jmsh0603ak.pdf 

JMSH0603AK 60V 2.6m N-Ch Power MOSFET Features Product Summary Parameter Typ. Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 145 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 2.6 m Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, IE 4.0, Com

 9.72. Size:1256K  jiejie micro
 jmsh0601ptl.pdf 

60V, 332A, 1.2m N-channel Power SGT MOSFET JMSH0601PTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 2.5 V Halogen-free; RoHS-compliant ID(@VGS=10V) 332 A RDS(ON)_Typ(@VGS=10V 1.2 mW Applications Load Switch PWM Application Power Management PowerJE 10x1

 9.73. Size:1241K  jiejie micro
 jmsh0603pe.pdf 

60V, 184A, 2.5m N-channel Power SGT MOSFET JMSH0603PE Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 2.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 184 A RDS(ON)_Typ(@VGS=10V 2.5 mW Applications Load Switch PWM Application Power Management D G S TO-2

 9.74. Size:1335K  jiejie micro
 jmsh0401pe.pdf 

40V, 224A, 2.1m N-channel Power SGT MOSFET JMSH0401PE Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 224 A RDS(ON)_Typ(@VGS=10V 2.1 mW Applications Load Switch PWM Application Power Management D G S Sche

 9.75. Size:644K  jiejie micro
 jmsh0602pg.pdf 

JMSH0602PG 60V 1.6m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 200 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.6 mW Applications Power Management in Computing, CE, IE 4.0, Communications Current Switching in

 9.76. Size:1350K  jiejie micro
 jmsh0803me.pdf 

80V, 206A, 2.7m N-channel Power SGT MOSFET JMSH0803ME Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 206 A RDS(ON)_Typ(@VGS=10V 2.7 mW Applications Load Switch PWM Application Power Management D G S TO-2

 9.77. Size:324K  jiejie micro
 jmsh0401bg.pdf 

 9.78. Size:1227K  jiejie micro
 jmsh0403pghwq.pdf 

40V, 140A, 3.0m N-channel Power SGT MOSFET JMSH0403PGHWQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 40 V 100% UIS Tested VGS(th)_Typ 3.1 V 100% Vds Tested ID(@VGS=10V) 140 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 3.0 mW AEC-Q101 Qualified Applications Load Switch PWM Applic

 9.79. Size:1189K  jiejie micro
 jmsh0403pg.pdf 

40V, 135A, 2.6m N-channel Power SGT MOSFET JMSH0403PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 3.1 V Halogen-free; RoHS-compliant ID(@VGS=10V) 135 A RDS(ON)_Typ(@VGS=10V 2.6 mW Applications Load Switch PWM Application Power Management D G S PDFN

 9.80. Size:1193K  jiejie micro
 jmsh0401pgq.pdf 

40V, 323A, 0.8m N-channel Power SGT MOSFET JMSH0401PGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 40 V 100% UIS Tested VGS(th)_Typ 2.7 V 100% Vds Tested ID(@VGS=10V) 323 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 0.8 mW AEC-Q101 Qualified Applications Load Switch PWM Applica

 9.81. Size:1129K  jiejie micro
 jmsh0802mtl.pdf 

80V, 285A, 1.4m N-channel Power SGT MOSFET JMSH0802MTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 80 V 100% Vds TESTED VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 285 A Pb-free plating RDS(ON)_Typ(@VGS=10V 1.4 mW Applications Load Switch PWM Application Power Mana

 9.82. Size:1258K  jiejie micro
 jmsh0803mtl.pdf 

80V, 253A, 2.1 m N-channel Power SGT MOSFET JMSH0803MTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 3.1 V Halogen-free; RoHS-compliant ID(@VGS=10V) 253 A RDS(ON)_Typ(@VGS=10V 2.1 mW Applications Load Switch PWM Application Power Management PowerJE 10x

 9.83. Size:381K  jiejie micro
 jmsh0601atl.pdf 

JMSH0601ATL 60V 1.2m TOLL N-Ch Power MOSFET Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 348 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.2 m Halogen-free and RoHS-compliant Applications Power Management in Computi

 9.84. Size:344K  jiejie micro
 jmsh0403bg.pdf 

JMSH0403BG 40V 2.2m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 139 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 2.2 m Halogen-free and RoHS-compliant Applications Power Management in Computing, CE,

 9.85. Size:1262K  jiejie micro
 jmsh0801ptl.pdf 

80V, 383A, 1.1m N-channel Power SGT MOSFET JMSH0801PTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 383 A RDS(ON)_Typ(@VGS=10V 1.1 mW Applications Load Switch PWM Application Power Management PowerJE 10x1

 9.86. Size:1190K  jiejie micro
 jmsh0606pg.pdf 

60V, 114A, 4.5m N-channel Power SGT MOSFET JMSH0606PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 114 A RDS(ON)_Typ(@VGS=10V 4.5 mW Applications Load Switch PWM Application Power Management D G S PDFN

 9.87. Size:1249K  jiejie micro
 jmsh0606pk.pdf 

60V, 68A, 4.5m N-channel Power SGT MOSFET JMSH0606PK Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 68 A RDS(ON)_Typ(@VGS=10V 4.5 mW Applications Load Switch PWM Application Power Management D G S TO-252

 9.88. Size:415K  jiejie micro
 jmsh0601agq.pdf 

JMSH0601AGQ 60V 1.3m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 225 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.3 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

 9.89. Size:652K  jiejie micro
 jmsh0603mgq.pdf 

60V, 163A, 2.3m N-channel Power SGT MOSFET JMSH0603MGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 60 V 100% UIS Tested VGS(th)_Typ 2.8 V 100% Vds Tested ID(@VGS=10V) 163 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 2.3 m AEC-Q101 Qualified Applications Load Switch PWM Applica

 9.90. Size:1275K  jiejie micro
 jmsh0803pc.pdf 

80V, 202A, 2.4m N-channel Power SGT MOSFET JMSH0803PC Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 202 A RDS(ON)_Typ(@VGS=10V 2.4 mW Applications Load Switch PWM Application Power Management TO-220-3L Sch

 9.91. Size:399K  jiejie micro
 jmsh0406agq.pdf 

JMSH0406AGQ 40V 4.1m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 90 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 4.1 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications P

 9.92. Size:323K  jiejie micro
 jmsh0403ag.pdf 

JMSH0403AG 40V 2.7m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 40 V Low Gate Charge VGS(th) 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 117 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V) 2.7 m Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, IE 4.0, Communicat

 9.93. Size:316K  jiejie micro
 jmsh0605agd.pdf 

JMSH0605AGD 60V 4.7m N-Ch Power MOSFET Features Product Summary Ultra-low RDS(ON) Parameter Value Unit VDS 60 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 54 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 4.7 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial Auto

 9.94. Size:1176K  jiejie micro
 jmsh0606pgdq.pdf 

60V, 61A, 4.1m Dual N-channel Power SGT MOSFET JMSH0606PGDQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 60 V 100% UIS Tested VGS(th)_Typ 2.7 V 100% Vds Tested ID(@VGS=10V) 61 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 4.1 mW AEC-Q101 Qualified Applications Load Switch PWM Appli

 9.95. Size:1272K  jiejie micro
 jmsh0602pc.pdf 

60V, 178A, 2.4m N-channel Power SGT MOSFET JMSH0602PC Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 178 A Pb-free plating RDS(ON)_Typ(@VGS=10V 2.4 mW Applications Load Switch PWM Application Power Manag

 9.96. Size:386K  jiejie micro
 jmsh0406buq.pdf 

JMSH0406BUQ 40V 4.8m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 59 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 4.8 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications PDF

 9.97. Size:358K  jiejie micro
 jmsh0406akq.pdf 

JMSH0406AKQ 40V 5.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 73 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 5.0 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications T

 9.98. Size:1281K  jiejie micro
 jmsh040spg.pdf 

40V, 324A, 0.7m N-channel Power SGT MOSFET JMSH040SPG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit VDSS 40 V 100% UIS Tested VGS(th)_Typ 3.1 V 100% Vds Tested ID(@VGS=10V) 324 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 0.7 mW Applications Load Switch PWM Application Power Management D G S PDFN5

 9.99. Size:1291K  jiejie micro
 jmsh0803mg.pdf 

80V, 162A, 2.5m N-channel Power SGT MOSFET JMSH0803MG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 80 V 100% Vds TESTED VGS(th)_Typ 3.1 V Halogen-free; RoHS-compliant ID(@VGS=10V) 162 A Pb-free plating RDS(ON)_Typ(@VGS=10V 2.5 mW Applications Load Switch PWM Application Power Manag

 9.100. Size:325K  jiejie micro
 jmsh040sag.pdf 

JMSH040SAG 40V 0.56m N-Ch Power MOSFET Features Product Summary Ultra-low RDS(ON) Parameter Value Unit Low Gate Charge VDS 40 V VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 384 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 0.56 m Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, IE 4.0, Co

 9.101. Size:428K  jiejie micro
 jmsh0403aghwq.pdf 

JMSH0403AGHWQ 40V 2.7m Half-Bridge N-Ch Power MOSFET Features Product Summary Parameter Value Unit 100% UIS Tested, 100% Rg Tested VDS 40 V Pb-free Lead Plating VGS(th)_Typ 2.8 V Halogen-free and RoHS-compliant ID (@ VGS = 10V) (1) 111 A RDS(ON)_Typ (@ VGS = 10V) AEC-Q101 Qualified for Automotive Applications 2.7 m Enhanced routing to reduce PCB layo

 9.102. Size:1284K  jiejie micro
 jmsh040spgq.pdf 

40V, 342A, 0.7m N-channel Power SGT MOSFET JMSH040SPGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 40 V 100% UIS Tested VGS(th)_Typ 3.1 V 100% Vds Tested ID(@VGS=10V) 342 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 0.7 mW AEC-Q101 Qualified Applications Load Switch PWM Applica

 9.103. Size:390K  jiejie micro
 jmsh0804nk.pdf 

JMSH0804NK 85V 3.3m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 85 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 112 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.3 m Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-vehicle, Robo

 9.104. Size:1272K  jiejie micro
 jmsh0603pk.pdf 

60V, 86A, 2.8m N-channel Power SGT MOSFET JMSH0603PK Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 2.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 86 A RDS(ON)_Typ(@VGS=10V 2.8 mW Applications Load Switch PWM Application Power Management D G S TO-252

 9.105. Size:1190K  jiejie micro
 jmsh0402pg.pdf 

40V, 202A, 1.4m N-channel Power SGT MOSFET JMSH0402PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 2.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 202 A RDS(ON)_Typ(@VGS=10V 1.4 mW Applications Load Switch PWM Application Power Management D G S PDFN

 9.106. Size:349K  jiejie micro
 jmsh0602ak.pdf 

JMSH0602AK 60V 2.2m N-Ch Power MOSFET Features Product Summary Parameter Typ. Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th) 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 195 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 2.2 m Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial Automation, C

 9.107. Size:549K  jiejie micro
 jmsh0805pg.pdf 

JMSH0805PG 80V 4.5mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 80 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 117 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 4.5 mW Halogen-free and RoHS-compliant Applications Power Management in Telecom., Industrial Automat

 9.108. Size:317K  jiejie micro
 jmsh0605agdq.pdf 

JMSH0605AGDQ 60V 4.7m N-Ch Power MOSFET Features Product Summary Ultra-low RDS(ON) Parameter Value Unit VDS 60 V Low Gate Charge VGS(th)_Typ 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 56 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 4.7 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications PDFN5x6-8L

 9.109. Size:1338K  jiejie micro
 jmsh0804ne.pdf 

80V, 164A, 3.3m N-channel Power SGT MOSFET JMSH0804NE Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 3.4 V Halogen-free; RoHS-compliant ID(@VGS=10V) 164 A RDS(ON)_Typ(@VGS=10V 3.3 mW Applications Load Switch PWM Application Power Management D G S Sche

 9.110. Size:1193K  jiejie micro
 jmsh0602pgq.pdf 

60V, 179A, 1.6m N-channel Power SGT MOSFET JMSH0602PGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 60 V 100% UIS Tested VGS(th)_Typ 3.0 V 100% Vds Tested ID(@VGS=10V) 179 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 1.6 mW AEC-Q101 Qualified Applications Load Switch PWM Applicat

 9.111. Size:586K  jiejie micro
 jmsh0403agq.pdf 

JMSH0403AGQ 40V 2.7mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 40 V Low Gate Charge VGS(th) 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 121 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 2.7 mW Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications PDFN5x6-8L Pin Conf