JMSH0801PE - Аналоги. Основные параметры
Наименование производителя: JMSH0801PE
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 313
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 313
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 54
ns
Cossⓘ - Выходная емкость: 4421
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0019
Ohm
Тип корпуса:
TO263
Аналог (замена) для JMSH0801PE
-
подбор ⓘ MOSFET транзистора по параметрам
JMSH0801PE технические параметры
..1. Size:1250K jiejie micro
jmsh0801pe.pdf 
80V, 313A, 1.5m N-channel Power SGT MOSFET JMSH0801PE Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 313 A RDS(ON)_Typ(@VGS=10V 1.5 mW Applications Load Switch PWM Application Power Management TO-263 -3L S
5.1. Size:1262K jiejie micro
jmsh0801ptl.pdf 
80V, 383A, 1.1m N-channel Power SGT MOSFET JMSH0801PTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 383 A RDS(ON)_Typ(@VGS=10V 1.1 mW Applications Load Switch PWM Application Power Management PowerJE 10x1
7.1. Size:350K jiejie micro
jmsh0803ngs.pdf 
JMSH0803NGS 80V 3.2m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 80 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 153 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.2 m Halogen-free and RoHS-compliant Applications Power Management in Telecom., Industrial Au
7.2. Size:379K jiejie micro
jmsh0805pc jmsh0805pe.pdf 
JMSH0805PC JMSH0805PE 80V 4.0m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 80 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 154 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 4.0 m Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-v
7.3. Size:388K jiejie micro
jmsh0805pk.pdf 
JMSH0805PK 80V 3.7m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 80 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 130 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.7 m Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-vehicle, Robo
7.4. Size:557K jiejie micro
jmsh0803ags.pdf 
JMSH0803AGS 80V 3.2mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 80 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 153 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.2 mW Halogen-free and RoHS-compliant Applications Power Management in Telecom., Industrial Automa
7.5. Size:1252K jiejie micro
jmsh0802pe.pdf 
80V, 263A, 1.6m N-channel Power SGT MOSFET JMSH0802PE Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 263 A RDS(ON)_Typ(@VGS=10V 1.6 mW Applications Load Switch PWM Application Power Management TO-263 -3L S
7.6. Size:1271K jiejie micro
jmsh0802mc.pdf 
80V, 249A, 2.0m N-channel Power SGT MOSFET JMSH0802MC Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 3.1 V Halogen-free; RoHS-compliant ID(@VGS=10V) 249 A RDS(ON)_Typ(@VGS=10V 2.0 mW Applications Load Switch PWM Application Power Management D G S TO-22
7.7. Size:1243K jiejie micro
jmsh0803mc.pdf 
80V, 165A, 3.0m N-channel Power SGT MOSFET JMSH0803MC Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 165 A RDS(ON)_Typ(@VGS=10V 3.0 mW Applications Load Switch PWM Application Power Management D G S TO-22
7.8. Size:1256K jiejie micro
jmsh0804nc.pdf 
80V, 148A, 3.8m N-channel Power SGT MOSFET JMSH0804NC Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 148 A RDS(ON)_Typ(@VGS=10V 3.8 mW Applications Load Switch PWM Application Power Management D G S Sche
7.9. Size:349K jiejie micro
jmsh0804ng.pdf 
JMSH0804NG 85V 3.1m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 85 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 137 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.1 m Halogen-free and RoHS-compliant Applications Power Management in Telecom., Industrial Aut
7.10. Size:1609K jiejie micro
jmsh0802me.pdf 
80V, 254A, 1.8m N-channel Power SGT MOSFET JMSH0802ME Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 254 A RDS(ON)_Typ(@VGS=10V 1.8 mW Applications Load Switch PWM Application Power Management D G S TO-2
7.11. Size:1261K jiejie micro
jmsh0802ptl.pdf 
80V, 333A, 1.3m N-channel Power SGT MOSFET JMSH0802PTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 333 A RDS(ON)_Typ(@VGS=10V 1.3 mW Applications Load Switch PWM Application Power Management PowerJE 10x1
7.12. Size:1350K jiejie micro
jmsh0803me.pdf 
80V, 206A, 2.7m N-channel Power SGT MOSFET JMSH0803ME Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 206 A RDS(ON)_Typ(@VGS=10V 2.7 mW Applications Load Switch PWM Application Power Management D G S TO-2
7.13. Size:1129K jiejie micro
jmsh0802mtl.pdf 
80V, 285A, 1.4m N-channel Power SGT MOSFET JMSH0802MTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 80 V 100% Vds TESTED VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 285 A Pb-free plating RDS(ON)_Typ(@VGS=10V 1.4 mW Applications Load Switch PWM Application Power Mana
7.14. Size:1258K jiejie micro
jmsh0803mtl.pdf 
80V, 253A, 2.1 m N-channel Power SGT MOSFET JMSH0803MTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 3.1 V Halogen-free; RoHS-compliant ID(@VGS=10V) 253 A RDS(ON)_Typ(@VGS=10V 2.1 mW Applications Load Switch PWM Application Power Management PowerJE 10x
7.15. Size:1275K jiejie micro
jmsh0803pc.pdf 
80V, 202A, 2.4m N-channel Power SGT MOSFET JMSH0803PC Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 202 A RDS(ON)_Typ(@VGS=10V 2.4 mW Applications Load Switch PWM Application Power Management TO-220-3L Sch
7.16. Size:1291K jiejie micro
jmsh0803mg.pdf 
80V, 162A, 2.5m N-channel Power SGT MOSFET JMSH0803MG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 80 V 100% Vds TESTED VGS(th)_Typ 3.1 V Halogen-free; RoHS-compliant ID(@VGS=10V) 162 A Pb-free plating RDS(ON)_Typ(@VGS=10V 2.5 mW Applications Load Switch PWM Application Power Manag
7.17. Size:390K jiejie micro
jmsh0804nk.pdf 
JMSH0804NK 85V 3.3m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 85 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 112 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.3 m Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-vehicle, Robo
7.18. Size:549K jiejie micro
jmsh0805pg.pdf 
JMSH0805PG 80V 4.5mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 80 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 117 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 4.5 mW Halogen-free and RoHS-compliant Applications Power Management in Telecom., Industrial Automat
7.19. Size:1338K jiejie micro
jmsh0804ne.pdf 
80V, 164A, 3.3m N-channel Power SGT MOSFET JMSH0804NE Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 3.4 V Halogen-free; RoHS-compliant ID(@VGS=10V) 164 A RDS(ON)_Typ(@VGS=10V 3.3 mW Applications Load Switch PWM Application Power Management D G S Sche
Другие MOSFET... JMSH040SAG
, JMSH040SAGQ
, JMSH040SPG
, JMSH040SPGQ
, JMSH040SPTSQ
, JMSH0702PE
, JMSH0704PC
, JMSH0704PE
, 4435
, JMSH0801PTL
, JMSH0802MC
, JMSH0802ME
, JMSH0802MTL
, JMSH0802PE
, JMSH0802PTL
, JMSH1101PC
, JMSH1101PE
.
History: JMSH0704PE
