JMSH0801PE Datasheet and Replacement
Type Designator: JMSH0801PE
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 313
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 313
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 54
nS
Cossⓘ -
Output Capacitance: 4421
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0019
Ohm
Package:
TO263
-
MOSFET ⓘ Cross-Reference Search
JMSH0801PE Datasheet (PDF)
..1. Size:1250K jiejie micro
jmsh0801pe.pdf 
80V, 313A, 1.5m N-channel Power SGT MOSFETJMSH0801PEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 80 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 313 ARDS(ON)_Typ(@VGS=10V 1.5 mWApplications Load Switch PWM Application Power ManagementTO-263 -3L S
5.1. Size:1262K jiejie micro
jmsh0801ptl.pdf
80V, 383A, 1.1m N-channel Power SGT MOSFETJMSH0801PTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 80 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 383 ARDS(ON)_Typ(@VGS=10V 1.1 mWApplications Load Switch PWM Application Power ManagementPowerJE10x1
7.1. Size:350K jiejie micro
jmsh0803ngs.pdf
JMSH0803NGS80V 3.2m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS80 V Low Gate Charge VGS(th)_Typ3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 153 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.2 m Halogen-free and RoHS-compliantApplications Power Management in Telecom., Industrial Au
7.2. Size:379K jiejie micro
jmsh0805pc jmsh0805pe.pdf
JMSH0805PCJMSH0805PE80V 4.0m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS80 V Low Gate Charge VGS(th)_Typ3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 154 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 4.0 m Halogen-free and RoHS-compliantApplications Motor Driving in Power Tool, E-v
7.3. Size:388K jiejie micro
jmsh0805pk.pdf
JMSH0805PK80V 3.7m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS80 V Low Gate Charge VGS(th)_Typ3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 130 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.7 m Halogen-free and RoHS-compliantApplications Motor Driving in Power Tool, E-vehicle, Robo
7.4. Size:557K jiejie micro
jmsh0803ags.pdf
JMSH0803AGS80V 3.2mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS80 V Low Gate Charge VGS(th)_Typ3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 153 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.2 mW Halogen-free and RoHS-compliantApplications Power Management in Telecom., Industrial Automa
7.5. Size:1252K jiejie micro
jmsh0802pe.pdf
80V, 263A, 1.6m N-channel Power SGT MOSFETJMSH0802PEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 80 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 263 ARDS(ON)_Typ(@VGS=10V 1.6 mWApplications Load Switch PWM Application Power ManagementTO-263 -3L S
7.6. Size:1271K jiejie micro
jmsh0802mc.pdf
80V, 249A, 2.0m N-channel Power SGT MOSFETJMSH0802MCProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 80 V 100% Vds TestedVGS(th)_Typ 3.1 V Halogen-free; RoHS-compliantID(@VGS=10V) 249 ARDS(ON)_Typ(@VGS=10V 2.0 mWApplications Load Switch PWM Application Power ManagementDG STO-22
7.7. Size:1243K jiejie micro
jmsh0803mc.pdf
80V, 165A, 3.0m N-channel Power SGT MOSFETJMSH0803MCProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 80 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 165 ARDS(ON)_Typ(@VGS=10V 3.0 mWApplications Load Switch PWM Application Power ManagementDG STO-22
7.8. Size:1256K jiejie micro
jmsh0804nc.pdf
80V, 148A, 3.8m N-channel Power SGT MOSFETJMSH0804NCProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 80 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 148 ARDS(ON)_Typ(@VGS=10V 3.8 mWApplications Load Switch PWM Application Power ManagementDG SSche
7.9. Size:349K jiejie micro
jmsh0804ng.pdf
JMSH0804NG85V 3.1m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS85 V Low Gate Charge VGS(th)_Typ3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 137 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.1 m Halogen-free and RoHS-compliantApplications Power Management in Telecom., Industrial Aut
7.10. Size:1609K jiejie micro
jmsh0802me.pdf
80V, 254A, 1.8m N-channel Power SGT MOSFETJMSH0802MEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 80 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 254 ARDS(ON)_Typ(@VGS=10V 1.8 mWApplications Load Switch PWM Application Power ManagementDG STO-2
7.11. Size:1261K jiejie micro
jmsh0802ptl.pdf
80V, 333A, 1.3m N-channel Power SGT MOSFETJMSH0802PTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 80 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 333 ARDS(ON)_Typ(@VGS=10V 1.3 mWApplications Load Switch PWM Application Power ManagementPowerJE10x1
7.12. Size:1350K jiejie micro
jmsh0803me.pdf
80V, 206A, 2.7m N-channel Power SGT MOSFETJMSH0803MEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 80 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 206 ARDS(ON)_Typ(@VGS=10V 2.7 mWApplications Load Switch PWM Application Power ManagementDG STO-2
7.13. Size:1129K jiejie micro
jmsh0802mtl.pdf
80V, 285A, 1.4m N-channel Power SGT MOSFETJMSH0802MTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 80 V 100% Vds TESTEDVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 285 A Pb-free platingRDS(ON)_Typ(@VGS=10V 1.4 mWApplications Load Switch PWM Application Power Mana
7.14. Size:1258K jiejie micro
jmsh0803mtl.pdf
80V, 253A, 2.1 m N-channel Power SGT MOSFETJMSH0803MTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 80 V 100% Vds TestedVGS(th)_Typ 3.1 V Halogen-free; RoHS-compliantID(@VGS=10V) 253 ARDS(ON)_Typ(@VGS=10V 2.1 mWApplications Load Switch PWM Application Power ManagementPowerJE10x
7.15. Size:1275K jiejie micro
jmsh0803pc.pdf
80V, 202A, 2.4m N-channel Power SGT MOSFETJMSH0803PCProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 80 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 202 ARDS(ON)_Typ(@VGS=10V 2.4 mWApplications Load Switch PWM Application Power ManagementTO-220-3LSch
7.16. Size:1291K jiejie micro
jmsh0803mg.pdf
80V, 162A, 2.5m N-channel Power SGT MOSFETJMSH0803MGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 80 V 100% Vds TESTEDVGS(th)_Typ 3.1 V Halogen-free; RoHS-compliantID(@VGS=10V) 162 A Pb-free platingRDS(ON)_Typ(@VGS=10V 2.5 mWApplications Load Switch PWM Application Power Manag
7.17. Size:390K jiejie micro
jmsh0804nk.pdf
JMSH0804NK85V 3.3m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS85 V Low Gate Charge VGS(th)_Typ3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 112 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 3.3 m Halogen-free and RoHS-compliantApplications Motor Driving in Power Tool, E-vehicle, Robo
7.18. Size:549K jiejie micro
jmsh0805pg.pdf
JMSH0805PG80V 4.5mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS80 V Low Gate Charge VGS(th)_Typ3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 117 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 4.5 mW Halogen-free and RoHS-compliantApplications Power Management in Telecom., Industrial Automat
7.19. Size:1338K jiejie micro
jmsh0804ne.pdf
80V, 164A, 3.3m N-channel Power SGT MOSFETJMSH0804NEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 80 V 100% Vds TestedVGS(th)_Typ 3.4 V Halogen-free; RoHS-compliantID(@VGS=10V) 164 ARDS(ON)_Typ(@VGS=10V 3.3 mWApplications Load Switch PWM Application Power ManagementDG SSche
Datasheet: JMSH040SAG
, JMSH040SAGQ
, JMSH040SPG
, JMSH040SPGQ
, JMSH040SPTSQ
, JMSH0702PE
, JMSH0704PC
, JMSH0704PE
, 2SK3568
, JMSH0801PTL
, JMSH0802MC
, JMSH0802ME
, JMSH0802MTL
, JMSH0802PE
, JMSH0802PTL
, JMSH1101PC
, JMSH1101PE
.
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