JMSH0401BGQ datasheet, подбор замены

 ..1. Size:402K  jiejie micro
 jmsh0401bgq.pdf 

JMSH0401BGQ 40V 0.90m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 276 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 0.90 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

 4.1. Size:324K  jiejie micro
 jmsh0401bg.pdf 

 6.1. Size:324K  jiejie micro
 jmsh0401cg.pdf 

JMSH0401CG 40V 1.1m N-Ch Power MOSFET Features Product Summary Ultra-low RDS(ON) Parameter Value Unit VDS 40 V Low Gate Charge VGS(th) 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 240 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V) 1.1 m Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, IE 4.0, Communicat

 6.2. Size:401K  jiejie micro
 jmsh0401agq.pdf 

JMSH0401AGQ 40V 1.3m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 197 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.3 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

 6.3. Size:1203K  jiejie micro
 jmsh0401mgq.pdf 

40V, 223A, 1.4m N-channel Power SGT MOSFET JMSH0401MGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 40 V VGS(th)_Typ 2.7 V 100% UIS Tested ID(@VGS=10V) 223 A 100% Vds Tested RDS(ON)_Typ(@VGS=10V 1.4 mW Halogen-free; RoHS-compliant AEC-Q101 Qualified Applications Load Switch PWM Applicat

 6.4. Size:1174K  jiejie micro
 jmsh0401pts.pdf 

40V, 361A, 0.9m N-channel Power SGT MOSFET JMSH0401PTS Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 2.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 361 A RDS(ON)_Typ(@VGS=10V 0.9 mW Applications Load Switch PWM Application Power Management D G S Sch

 6.5. Size:355K  jiejie micro
 jmsh0401cgq.pdf 

 6.6. Size:358K  jiejie micro
 jmsh0401atl.pdf 

JMSH0401ATL 40V 1.0m TOLL N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 40 V Low Gate Charge VGS(th)_Typ 2.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 336 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.0 m Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, IE

 6.7. Size:1208K  jiejie micro
 jmsh0401pg.pdf 

40V, 211A, 0.8m N-channel Power SGT MOSFET JMSH0401PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 40 V 100% Vds TESTED VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 211 A Pb-free plating RDS(ON)_Typ(@VGS=10V 0.8 mW Applications Load Switch PWM Application Power Manage

 6.8. Size:1175K  jiejie micro
 jmsh0401ptsq.pdf 

40V, 381A, 0.9m N-channel Power SGT MOSFET JMSH0401PTSQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 40 V 100% UIS Tested VGS(th)_Typ 2.6 V 100% Vds Tested ID(@VGS=10V) 381 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 0.9 mW AEC-Q101 Qualified Applications Load Switch PWM Applica

 6.9. Size:625K  jiejie micro
 jmsh0401atlq.pdf 

JMSH0401ATLQ 40V 1.0mW TOLL N-Ch Power MOSFET Features Product Summary Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 337 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.0 mW Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

 6.10. Size:562K  jiejie micro
 jmsh0401atsq.pdf 

JMSH0401ATSQ 40V 0.9mW sTOLL N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Standard Level Threshold, VGS(th) VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 352 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 0.90 mW Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automoti

 6.11. Size:377K  jiejie micro
 jmsh0401ag.pdf 

JMSH0401AG 40V 1.3m N-Ch Power MOSFET Features Product Summary Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 190 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.3 m Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, IE

 6.12. Size:1335K  jiejie micro
 jmsh0401pe.pdf 

40V, 224A, 2.1m N-channel Power SGT MOSFET JMSH0401PE Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 40 V 100% Vds Tested VGS(th)_Typ 2.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 224 A RDS(ON)_Typ(@VGS=10V 2.1 mW Applications Load Switch PWM Application Power Management D G S Sche

 6.13. Size:1193K  jiejie micro
 jmsh0401pgq.pdf 

40V, 323A, 0.8m N-channel Power SGT MOSFET JMSH0401PGQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 40 V 100% UIS Tested VGS(th)_Typ 2.7 V 100% Vds Tested ID(@VGS=10V) 323 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 0.8 mW AEC-Q101 Qualified Applications Load Switch PWM Applica