JMSH0401BGQ Datasheet. Specs and Replacement

Type Designator: JMSH0401BGQ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 176 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 276 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 88 nS

Cossⓘ - Output Capacitance: 3405 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0011 Ohm

Package: PDFN5X6-8L

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JMSH0401BGQ datasheet

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JMSH0401BGQ

JMSH0401BGQ 40V 0.90m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 276 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 0.90 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications ... See More ⇒

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JMSH0401BGQ

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JMSH0401BGQ

JMSH0401CG 40V 1.1m N-Ch Power MOSFET Features Product Summary Ultra-low RDS(ON) Parameter Value Unit VDS 40 V Low Gate Charge VGS(th) 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 240 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V) 1.1 m Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, IE 4.0, Communicat... See More ⇒

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JMSH0401BGQ

JMSH0401AGQ 40V 1.3m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 197 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.3 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications ... See More ⇒

Detailed specifications: JMSH1506ASQ, JMSH1506MTL, JMSH0401AG, JMSH0401AGQ, JMSH0401ATL, JMSH0401ATLQ, JMSH0401ATSQ, JMSH0401BG, IRF1404, JMSH0401CG, JMSH0401CGQ, JMSH0401MGQ, JMSH0401PE, JMSH0401PG, JMSH0401PGQ, JMSH0401PTS, JMSH0401PTSQ

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