JMTQ130P04A - аналоги, даташиты, параметры транзистора

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JMTQ130P04ADescriptionJMT P-channel Enhancement Mode Power MOSFETFeatures Application V = -40V, I = -30A PWM ApplicationsDS DR

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JMTQ130N04DDescriptionJMT Dual N-channel Enhancement Mode Power MOSFETFeaturesApplications 40V, 20A Load SwitchRDS(ON)

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JMTQ120C03DDescriptionJMT N And P-Channel Enhancement Mode MOSFETFeatures Application N-Channel: 30V, 11A Battery ProtectionR

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40V, 29A, 15m N-channel Power Trench MOSFETJMTQ120N04DProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 1.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 29 A Pb-free platingRDS(ON)_Typ(@VGS=10V 14 mWRDS(ON)_Typ(@VGS=4.5V 15 mWApplications Load Switch PWM

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JMTQ120N03DDescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications Load Switch 30V, 15A PWM ApplicationRDS(ON)

9.4. Size:1399K jiejie micro
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30V, 34A, 13.5m N-channel Power Trench MOSFETJMTQ100N03DProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 34 A Pb-free platingRDS(ON)_Typ(@VGS=10V 9.9 mWRDS(ON)_Typ(@VGS=4.5V 13.5 mWApplications Load Switch

9.5. Size:1355K jiejie micro
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-30V, -12A, 87m P-channel Power Trench MOSFETJMTQ11DP03AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS -30 V 100% Vds TestedVGS(th)_Typ -1.7 V Halogen-free; RoHS-compliantID(@VGS=-10V) -12 A Pb-free platingRDS(ON)_Typ(@VGS=-10V 62 mWRDS(ON)_Typ(@VGS=-4.5V 87 mWApplications Load Switch

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JMTQ160P03ADescriptionJMT P-channel Enhancement Mode Power MOSFETFeatures Application V = -30V, I = -15A PWM ApplicationsDS DR

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JMTQ120N03ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 30V, 18A Load SwitchRDS(ON)

9.8. Size:1355K jiejie micro
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-30V,-40A, 9.3m P-channel Power Trench MOSFETJMTQ100P03AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS -30 V 100% Vds TestedVGS(th)_Typ -1.6 V Halogen-free; RoHS-compliantID(@VGS=-10V) -40 A Pb-free plating RDS(ON)_Typ(@VGS=-10V 6.4 mWRDS(ON)_Typ(@VGS=-4.5V 9.3 mW Applications Load Swi

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JMTQ100N03ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 30V, 25A Load SwitchRDS(ON)

9.10. Size:1237K jiejie micro
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30V, 29A, 16.5m N-channel Power Trench MOSFETJMTQ190N03AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 29 ARDS(ON)_Typ(@VGS=10V 13.2 mW Pb-free platingRDS(ON)_Typ(@VGS=4.5V 16.5 mWApplications Load Switch

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JMTQ11DN10ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Application 100V,10A Load SwitchR

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40V, 14A, 21m&38m N And P-channel Power Trench MOSFETJMTQ170C04DProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters N P Unit 100% UIS TestedVDSS 40 -40 V 100% Vds TestedVGS(th)_Typ 1.7 -1.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 14 -14 A Pb-free platingRDS(ON)_Typ(@VGS=10V 16 32 mWRDS(ON)_Typ(@VGS=4.5V 21 38 mWApplic

9.13. Size:608K jiejie micro
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