JMTK085P04A - Даташиты. Аналоги. Основные параметры

JMTK085P04ADescriptionJMT P-channel Enhancement Mode Power MOSFETFeatures Application V = -40V, I = -70A PWM ApplicationsDS DR

JMTK080P03ADescriptionJMT P-channel Enhancement Mode Power MosFETFeatures Applications -30V, -60A Load SwitchRDS(ON)

-30V, -90A, 4.2m P-channel Power Trench MOSFETJMTK060P03AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TESTEDVDSS -30 V 100% Vds TESTEDVGS(th)_Typ -1.8 V Halogen-free; RoHS-compliantID(@VGS=-10V) -90 ARDS(ON)_Typ(@VGS=-10V 4.2 mW Pb-free platingRDS(ON)_Typ(@VGS=-4.5V 6.3 mWApplications Load Switc

40V, 150A, 3.6m N-channel Power Trench MOSFETJMTK035N04LProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 40 V 100% Vds TESTEDVGS(th)_Typ 1.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 150 A Pb-free platingRDS(ON)_Typ(@VGS=10V 2.8 mWRDS(ON)_Typ(@VGS=4.5V 3.6 mWApplications Load Switch

JMTK050P03A Description JMT P-channel Enhancement Mode Power MOSFET Features Application V = -30V, I = -100A PWM Applications DS DR

JMTK060N06ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Application 60V, 120A Load SwitchR

70V, 51A, 6.1m N-channel Power Trench MOSFETJMTK068N07AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 70 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 51 A Pb-free platingRDS(ON)_Typ(@VGS=10V 6.1 mWRDS(ON)_Typ(@VGS=8.0V 6.5 mWApplications Load Switch P

30V, 190A, 2.5m N-channel Power Trench MOSFETJMTK018N03AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 190 ARDS(ON)_Typ(@VGS=10V 2.0 mWApplicationsRDS(ON)_Typ(@VGS=4.5V 2.5 mW Load Switch PWM Application