JMSL1040PGQ
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: JMSL1040PGQ
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 94
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 35
A
Tj ⓘ - Максимальная температура канала: 175
°C
tr ⓘ -
Время нарастания: 15
ns
Cossⓘ - Выходная емкость: 117
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.031
Ohm
Тип корпуса:
PDFN5X6-8L
Аналог (замена) для JMSL1040PGQ
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подбор ⓘ MOSFET транзистора по параметрам
JMSL1040PGQ
Datasheet (PDF)
..1. Size:1228K jiejie micro
jmsl1040pgq.pdf 
100V, 35A, 30m N-channel Power SGT MOSFETJMSL1040PGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) ParametersValue Unit Low Gate ChargeVDSS 100 V 100% UIS TestedVGS(th)_Typ 1.8 V 100% Vds TestedID(@VGS=10V) 35 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 24 mW AEC-Q101 Qualified RDS(ON)_Typ(@VGS=4.5V 30 mWApplications Lo
4.1. Size:758K jiejie micro
jmsl1040pgdq.pdf 
100V, 18A, 36m Dual N-channel Power SGT MOSFETJMSL1040PGDQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate ChargeVDSS 100 V 100% UIS TestedVGS(th)_Typ 1.8 V 100% Vds TestedID(@VGS=10V) 18 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 29 mRDS(ON)_Typ(@VGS=4.5V 36 m AEC-Q101 QualifiedApplication
6.1. Size:377K jiejie micro
jmsl1040agq.pdf 
JMSL1040AGQ100V 29m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 27 A RDS(ON)_Typ (@ VGS = 10V)29 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)39 m Halogen-free and RoHS-compliant AEC-Q101 Qualifi
6.2. Size:407K jiejie micro
jmsl1040auq.pdf 
JMSL1040AUQ100V 29m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 20 A RDS(ON)_Typ (@ VGS = 10V)29 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)39 m Halogen-free and RoHS-compliant AEC-Q101 Qualifi
6.3. Size:298K jiejie micro
jmsl1040aud.pdf 
JMSL1040AUD100V 31mDual N-Ch Power MOSFETProduct SummaryFeaturesParameter Low Gate Charge Value Unit VDS100 V 100% UIS Tested, 100% Rg Tested VGS(th)_Typ2.0 V Pb-free Lead Plating ID (@ VGS = 10V) (1) 17 A Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 10V)31 m RDS(ON)_Typ (@ VGS = 4.5V)39 mApplications Power Management in C
6.4. Size:323K jiejie micro
jmsl1040agdq.pdf 
JMSL1040AGDQ100V 28m Dual N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ1.9 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 22 A RDS(ON)_Typ (@ VGS = 10V)28 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications
6.5. Size:304K jiejie micro
jmsl1040agd.pdf 
JMSL1040AGD100V 28m Dual N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 18.4 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 28 m RDS(ON)_Typ (@ VGS = 4.5V)40 m Halogen-free and RoHS-compliantApplications Power
6.6. Size:369K jiejie micro
jmsl1040ag.pdf 
JMSL1040AG100V 29m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 18.9 A RDS(ON)_Typ (@ VGS = 10V)29 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)39 m Halogen-free and RoHS-compliantApplications Power Mana
6.7. Size:336K jiejie micro
jmsl1040au.pdf 
JMSL1040AU100V 29m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low Gate Charge VDS100 V 100% UIS Tested, 100% Rg Tested VGS(th)_Typ2.0 V Pb-free Lead Plating ID (@ VGS = 10V) (1) 18 A RDS(ON)_Typ (@ VGS = 10V) Halogen-free and RoHS-compliant 29 m RDS(ON)_Typ (@ VGS = 4.5V)38 mApplications Power Management in Computing,
6.8. Size:341K jiejie micro
jmsl1040ac jmsl1040ae.pdf 
JMSL1040ACJMSL1040AE100V 30m N-Ch Power MOSFETProduct SummaryFeaturesParameter Typ. Unit Low RDS(ON) VDS100 V Low Gate Charge VGS(th)1.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 26 A RDS(ON) (@ VGS = 10V)30 Pb-free Lead Plating m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial Autom
6.9. Size:280K jiejie micro
jmsl1040av.pdf 
JMSL1040AV100V 29m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low Gate Charge VDS100 V Low Input Capacitance VGS(th)_Typ1.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 4.7 A RDS(ON)_Typ (@ VGS = 10V) Excepcional RDS(ON) in Low-profile DFN2020-6L 29 m RDS(ON)_Typ (@ VGS = 4.5V)37 m Pb-free Lead Plating Ha
6.10. Size:337K jiejie micro
jmsl1040avq.pdf 
JMSL1040AVQ100V 29mN-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ1.9 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 10.6 A RDS(ON)_Typ (@ VGS = 10V)29 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications U
6.11. Size:493K jiejie micro
jmsl1040ak.pdf 
JMSL1040AK100V 32mW N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low Gate Charge VDS100 V 100% UIS Tested, 100% Rg Tested VGS(th)_Typ2.0 V Halogen-free and RoHS-compliant ID (@ VGS = 10V) (1) 24 A RDS(ON)_typ (@ VGS = 10V)32 mW RDS(ON)_typ (@ VGS = 4.5V)43 mWApplications Power Managerment in Telecom., Industrial Automation, CE
6.12. Size:310K jiejie micro
jmsl1040apd.pdf 
JMSL1040APD100V 31m Dual N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 12.3 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)31 m RDS(ON)_Typ (@ VGS = 4.5V)40 m Halogen-free and RoHS-compliantApplications Power M
6.13. Size:285K jiejie micro
jmsl1040ay.pdf 
JMSL1040AY100V 30m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low Gate Charge VDS100 V 100% UIS Tested, 100% Rg Tested VGS(th)_Typ2.0 V Pb-free Lead Plating ID (@ VGS = 10V) (1) 13 A Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 10V)30 m RDS(ON)_Typ (@ VGS = 4.5V)38 mApplications Power Management in Computing,
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