AP100N03T datasheet, аналоги, основные параметры

Наименование производителя: AP100N03T  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 68 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 14.5 ns

Cossⓘ - Выходная емкость: 245 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0055 Ohm

Тип корпуса: TO263

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Аналог (замена) для AP100N03T

- подборⓘ MOSFET транзистора по параметрам

 

AP100N03T даташит

 ..1. Size:1583K  cn apm
 ap100n03p ap100n03t.pdf pdf_icon

AP100N03T

AP100N03P/T 30V N-Channel Enhancement Mode MOSFET Description The AP100N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =100 A DS D R

 6.1. Size:1377K  cn apm
 ap100n03ad.pdf pdf_icon

AP100N03T

AP100N03AD 30V N-Channel Enhancement Mode MOSFET Description The AP100N03AD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =100A DS D R

 6.2. Size:1663K  cn apm
 ap100n03d.pdf pdf_icon

AP100N03T

AP100N03D 30V N-Channel Enhancement Mode MOSFET Description The AP100N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =100 A DS D R

 6.3. Size:1322K  cn apm
 ap100n03y.pdf pdf_icon

AP100N03T

AP100N03Y 30V N-Channel Enhancement Mode MOSFET Description The AP100N03Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =100A DS D R

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... APJ14N65D, APJ14N65F, APJ14N65P, APJ14N65T, AP01P10I, AP100N03AD, AP100N03D, AP100N03P, 7N65, AP100N03Y, AP100N04D, AP100N04NF, AP100N08D, AP100P02NF, APG60N10P, APG60N10T, APG80N10NF