AP100N03T MOSFET Datasheet: N-Ch, 30V, 100A. Full specification with pinout and replacement list

AP100N03T Specs and Replacement

   Type Designator: AP100N03T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 14.5 nS
   Cossⓘ - Output Capacitance: 245 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO263

AP100N03T substitution

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AP100N03T datasheet

..1. Size:1583K cn apm
ap100n03p ap100n03t.pdf pdf_icon

AP100N03P/T 30V N-Channel Enhancement Mode MOSFET Description The AP100N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =100 A DS D R ... See More ⇒

6.1. Size:1377K cn apm
ap100n03ad.pdf pdf_icon

AP100N03AD 30V N-Channel Enhancement Mode MOSFET Description The AP100N03AD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =100A DS D R ... See More ⇒

6.2. Size:1663K cn apm
ap100n03d.pdf pdf_icon

AP100N03D 30V N-Channel Enhancement Mode MOSFET Description The AP100N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =100 A DS D R ... See More ⇒

6.3. Size:1322K cn apm
ap100n03y.pdf pdf_icon

AP100N03Y 30V N-Channel Enhancement Mode MOSFET Description The AP100N03Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =100A DS D R ... See More ⇒

Detailed specifications: APJ14N65D , APJ14N65F , APJ14N65P , APJ14N65T , AP01P10I , AP100N03AD , AP100N03D , AP100N03P , 7N65 , AP100N03Y , AP100N04D , AP100N04NF , AP100N08D , AP100P02NF , APG60N10P , APG60N10T , APG80N10NF .