AP100N08D - описание и поиск аналогов

 

Аналоги AP100N08D. Основные параметры


   Наименование производителя: AP100N08D
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 158 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 33 ns
   Cossⓘ - Выходная емкость: 770 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0068 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для AP100N08D

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP100N08D даташит

 ..1. Size:1461K  cn apm
 ap100n08d.pdf pdf_icon

AP100N08D

AP100N08D 80V N-Channel Enhancement Mode MOSFET Description The AP100N08D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =100A DS D R

 7.1. Size:1583K  cn apm
 ap100n03p ap100n03t.pdf pdf_icon

AP100N08D

AP100N03P/T 30V N-Channel Enhancement Mode MOSFET Description The AP100N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =100 A DS D R

 7.2. Size:1377K  cn apm
 ap100n03ad.pdf pdf_icon

AP100N08D

AP100N03AD 30V N-Channel Enhancement Mode MOSFET Description The AP100N03AD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =100A DS D R

 7.3. Size:903K  cn apm
 ap100n04d.pdf pdf_icon

AP100N08D

AP100N04D 40V N-Channel Enhancement Mode MOSFET Description The AP100N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =100 A DS D R

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP01P10I , AP100N03AD , AP100N03D , AP100N03P , AP100N03T , AP100N03Y , AP100N04D , AP100N04NF , AON7408 , AP100P02NF , APG60N10P , APG60N10T , APG80N10NF , APG80N10P , APG80N10T , APJ10N65D , AP65R950 .

History: 2N7227JX | OM6101ST

 

 
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