AP100N08D Datasheet. Specs and Replacement

Type Designator: AP100N08D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 158 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 770 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm

Package: TO252

  📄📄 Copy 

AP100N08D substitution

- MOSFET ⓘ Cross-Reference Search

 

AP100N08D datasheet

 ..1. Size:1461K  cn apm
 ap100n08d.pdf pdf_icon

AP100N08D

AP100N08D 80V N-Channel Enhancement Mode MOSFET Description The AP100N08D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =100A DS D R ... See More ⇒

 7.1. Size:1583K  cn apm
 ap100n03p ap100n03t.pdf pdf_icon

AP100N08D

AP100N03P/T 30V N-Channel Enhancement Mode MOSFET Description The AP100N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =100 A DS D R ... See More ⇒

 7.2. Size:1377K  cn apm
 ap100n03ad.pdf pdf_icon

AP100N08D

AP100N03AD 30V N-Channel Enhancement Mode MOSFET Description The AP100N03AD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =100A DS D R ... See More ⇒

 7.3. Size:903K  cn apm
 ap100n04d.pdf pdf_icon

AP100N08D

AP100N04D 40V N-Channel Enhancement Mode MOSFET Description The AP100N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =100 A DS D R ... See More ⇒

SHOW MORE

Detailed specifications: AP01P10I, AP100N03AD, AP100N03D, AP100N03P, AP100N03T, AP100N03Y, AP100N04D, AP100N04NF, 2N7000, AP100P02NF, APG60N10P, APG60N10T, APG80N10NF, APG80N10P, APG80N10T, APJ10N65D, AP65R950

Keywords - AP100N08D MOSFET specs

 AP100N08D cross reference

 AP100N08D equivalent finder

 AP100N08D pdf lookup

 AP100N08D substitution

 AP100N08D replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs